TY - JOUR
T1 - Thermoelectrical properties of Si-Ti-B in situ composite plates prepared by chemical vapor deposition
AU - Mukaida, M.
AU - Goto, T.
AU - Hirai, T.
N1 - Funding Information:
The authors are indebted to Professors Koji Sumino and Masashi Suezawa of the Institute for Materials Research, Tohoku University for the measurements of the hall coefficients. The authors would like to thank Mr. Takayuki Narushima of the Faculty of Engineering, Tohoku TJniversity for the ICP analysis. This research was supported in part by a Grant-in-Aid for Scientific Research under Contract No. 01550543 from the Ministry of Education, Science and Culture.
PY - 1992/1/1
Y1 - 1992/1/1
N2 - Highly pure, dense SiB4 and SiB6 plates were prepared by chemical vapor deposition (CVD) at deposition temperatures (Tdep) from 1323 to 1773 K, total gas pressures (Ptot) from 4 to 40 kPa and B/Si source gas ratios (mB/Si=2B2H6/SiCI4) from 0.2 to 2.8, and their thermoelectrical properties were measured. The Seebeck coefficient (S) of CVD-SiB6 (0.7 mm in thickness), which is known to be a high temperature thermoelectric material, was 320 μVK1, while its electrical conductivity (s) was 7 Q-1cm-1, SiB6 + TiB2 and SiB6 + SiB4in situ composite plates were also prepared to improve the thermoelectric property of CVD-SiB6. The σ value of the CVD-SiB6 + 12 wt% TiB2in situ composite plate (0.7 mm in thickness) was one order of magnitude larger than that of CVD-SiB6 at room temperature, while the figure of merit for the thermoelectric materials (Z) was smaller because of the smaller value of S. However, the Z value of SiB6 + 40 wt% SiB4in situ composite plate (0.5 mm in thickness) was 10-5, larger than that of CVD-SiB6.
AB - Highly pure, dense SiB4 and SiB6 plates were prepared by chemical vapor deposition (CVD) at deposition temperatures (Tdep) from 1323 to 1773 K, total gas pressures (Ptot) from 4 to 40 kPa and B/Si source gas ratios (mB/Si=2B2H6/SiCI4) from 0.2 to 2.8, and their thermoelectrical properties were measured. The Seebeck coefficient (S) of CVD-SiB6 (0.7 mm in thickness), which is known to be a high temperature thermoelectric material, was 320 μVK1, while its electrical conductivity (s) was 7 Q-1cm-1, SiB6 + TiB2 and SiB6 + SiB4in situ composite plates were also prepared to improve the thermoelectric property of CVD-SiB6. The σ value of the CVD-SiB6 + 12 wt% TiB2in situ composite plate (0.7 mm in thickness) was one order of magnitude larger than that of CVD-SiB6 at room temperature, while the figure of merit for the thermoelectric materials (Z) was smaller because of the smaller value of S. However, the Z value of SiB6 + 40 wt% SiB4in situ composite plate (0.5 mm in thickness) was 10-5, larger than that of CVD-SiB6.
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U2 - 10.1080/10426919208947445
DO - 10.1080/10426919208947445
M3 - Article
AN - SCOPUS:0027039909
VL - 7
SP - 625
EP - 647
JO - Materials and Manufacturing Processes
JF - Materials and Manufacturing Processes
SN - 1042-6914
IS - 4
ER -