TY - JOUR
T1 - Thermoelectric response in the incoherent transport region near Mott transition
T2 - The case study of La1-xSrxVO3
AU - Uchida, M.
AU - Oishi, K.
AU - Matsuo, M.
AU - Koshibae, W.
AU - Onose, Y.
AU - Mori, M.
AU - Fujioka, J.
AU - Miyasaka, S.
AU - Maekawa, S.
AU - Tokura, Y.
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011/4/25
Y1 - 2011/4/25
N2 - We report a systematic investigation on the high-temperature thermoelectric response in a typical filling-control Mott transition system La 1-xSrxVO3. In the vicinity of the Mott transition, incoherent charge transport appears with increasing temperature and the thermopower undergoes two essential crossovers, asymptotically approaching the limit values expected from the entropy consideration, known as the Heikes formula. By comparison with the results of the dynamical mean-field theory, we show that the thermopower in the Mott critical state mainly measures the entropy per charge carrier that depends on electronic degrees of freedom available at the measurement temperature. Our findings verify that the Heikes formula is indeed applicable to the real correlated electron systems at practical temperatures (T>200 K).
AB - We report a systematic investigation on the high-temperature thermoelectric response in a typical filling-control Mott transition system La 1-xSrxVO3. In the vicinity of the Mott transition, incoherent charge transport appears with increasing temperature and the thermopower undergoes two essential crossovers, asymptotically approaching the limit values expected from the entropy consideration, known as the Heikes formula. By comparison with the results of the dynamical mean-field theory, we show that the thermopower in the Mott critical state mainly measures the entropy per charge carrier that depends on electronic degrees of freedom available at the measurement temperature. Our findings verify that the Heikes formula is indeed applicable to the real correlated electron systems at practical temperatures (T>200 K).
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U2 - 10.1103/PhysRevB.83.165127
DO - 10.1103/PhysRevB.83.165127
M3 - Article
AN - SCOPUS:79961114780
VL - 83
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 16
M1 - 165127
ER -