Thermoelectric properties of ZrNiSn-based half-Heusler compounds by solid state reaction method

Qiang Shen; Lianmeng Zhang; Lidong Chen; Takashi Goto; Toshio Hirai

doi:10.1023/A:1017928800031

Thermoelectric properties of ZrNiSn-based half-Heusler compounds by solid state reaction method

Qiang Shen, Lianmeng Zhang, Lidong Chen, Takashi Goto, Toshio Hirai

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

ZrNiSn-based half-Heusler compounds were fabricated by the method of solid state reaction. In a Hf_0.5Zr_0.5Ni_0.8Pd_0.2- Sn_0.99Sb_0.01 compound, a thermal conductivity as low as 4.5 W/m-K was measured at room temperature. Although the Seebeck coefficient decreased, it was only by a small amount. The ZT value reached a maximum value of 0.7 at about 800 K for the Hf_0.5Zr_0.5Ni_0.8Pd_0.2- Sn_0.99Sb_0.01 sample.

Original language	English
Pages (from-to)	2197-2199
Number of pages	3
Journal	Journal of Materials Science Letters
Volume	20
Issue number	24
DOIs	https://doi.org/10.1023/A:1017928800031
Publication status	Published - 2001 Dec 15

ASJC Scopus subject areas

Materials Science(all)

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title = "Thermoelectric properties of ZrNiSn-based half-Heusler compounds by solid state reaction method",

abstract = "ZrNiSn-based half-Heusler compounds were fabricated by the method of solid state reaction. In a Hf0.5Zr0.5Ni0.8Pd0.2- Sn0.99Sb0.01 compound, a thermal conductivity as low as 4.5 W/m-K was measured at room temperature. Although the Seebeck coefficient decreased, it was only by a small amount. The ZT value reached a maximum value of 0.7 at about 800 K for the Hf0.5Zr0.5Ni0.8Pd0.2- Sn0.99Sb0.01 sample.",

author = "Qiang Shen and Lianmeng Zhang and Lidong Chen and Takashi Goto and Toshio Hirai",

year = "2001",

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AU - Shen, Qiang

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AU - Chen, Lidong

AU - Goto, Takashi

AU - Hirai, Toshio

PY - 2001/12/15

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N2 - ZrNiSn-based half-Heusler compounds were fabricated by the method of solid state reaction. In a Hf0.5Zr0.5Ni0.8Pd0.2- Sn0.99Sb0.01 compound, a thermal conductivity as low as 4.5 W/m-K was measured at room temperature. Although the Seebeck coefficient decreased, it was only by a small amount. The ZT value reached a maximum value of 0.7 at about 800 K for the Hf0.5Zr0.5Ni0.8Pd0.2- Sn0.99Sb0.01 sample.

AB - ZrNiSn-based half-Heusler compounds were fabricated by the method of solid state reaction. In a Hf0.5Zr0.5Ni0.8Pd0.2- Sn0.99Sb0.01 compound, a thermal conductivity as low as 4.5 W/m-K was measured at room temperature. Although the Seebeck coefficient decreased, it was only by a small amount. The ZT value reached a maximum value of 0.7 at about 800 K for the Hf0.5Zr0.5Ni0.8Pd0.2- Sn0.99Sb0.01 sample.

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Thermoelectric properties of ZrNiSn-based half-Heusler compounds by solid state reaction method

Abstract

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