Thermoelectric properties of ZrNiSn-based half-Heusler compounds by solid state reaction method

Qiang Shen, Lianmeng Zhang, Lidong Chen, Takashi Goto, Toshio Hirai

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

ZrNiSn-based half-Heusler compounds were fabricated by the method of solid state reaction. In a Hf0.5Zr0.5Ni0.8Pd0.2- Sn0.99Sb0.01 compound, a thermal conductivity as low as 4.5 W/m-K was measured at room temperature. Although the Seebeck coefficient decreased, it was only by a small amount. The ZT value reached a maximum value of 0.7 at about 800 K for the Hf0.5Zr0.5Ni0.8Pd0.2- Sn0.99Sb0.01 sample.

Original languageEnglish
Pages (from-to)2197-2199
Number of pages3
JournalJournal of Materials Science Letters
Volume20
Issue number24
DOIs
Publication statusPublished - 2001 Dec 15

ASJC Scopus subject areas

  • Materials Science(all)

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