Abstract
High-purity single crystalline B4C, several cm in size, has been prepared by a Floating Zone method. The electrical conductivity, Hall mobility, Seebeck coefficient and thermal conductivity are measured from room temperature to 1023 K. The electrical conductivity is about four times higher than that of sintered B4C. The mobility has increased with increasing temperature, indicating hopping conduction of charge carriers. The Seebeck coefficient is 240-260 μ VK-1, almost independent of temperature. The thermal conductivity is about twice higher than that of sintered B4C. The thermoelectric figure-of-merit is also higher than that of sintered B4C, being 4.2 × 10-5 K-1 at 1100 K.
| Original language | English |
|---|---|
| Pages (from-to) | 1445-1450 |
| Number of pages | 6 |
| Journal | Materials Transactions |
| Volume | 42 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2001 |
| Externally published | Yes |
Keywords
- Boron carbide
- Electrical conductivity
- Floating zone
- Hall mobility
- Seebeck coefficient
- Single crystal
- Thermal conductivity
- Thermoelectric property
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering