Thermoelectric Properties of SiB14-SiB6 Composites Prepared by Arc Melting and Annealing

Jianhui Li; Takashi Goto; Toshio Hirai

doi:10.2497/jjspm.45.581

Thermoelectric Properties of SiB₁₄-SiB₆ Composites Prepared by Arc Melting and Annealing

Jianhui Li, Takashi Goto, Toshio Hirai

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Si-B system composites were prepared by arc melting using Si and B powders and then annealed in an argon atmosphere. Arc-melted specimens consisted of mainly SiB₁₄ and free Si. SiB₆ phase formed at the boundary between SiB₁₄ and free Si at content of 80 to 86mol%B by the annealing at 1670K. The lattice parameter of SiB₁₄ increased with increasing annealing time due to the change of Si to B content ratio in SiB₁₄ phase. The electrical and thermal conductivity of the composites decreased with increasing annealing time, but the Seebeck coefficient (α) showed maxima at the annealing time around 5.4ks. The greatest dimensionless figure-of-merit (ZT) value obtained in this study was 0.14 at T=1100K.

Original language	English
Pages (from-to)	581-585
Number of pages	5
Journal	Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Volume	45
Issue number	6
DOIs	https://doi.org/10.2497/jjspm.45.581
Publication status	Published - 1998 Jun

Keywords

Annealing
Arc melting
High temperature
Silicon boride
Thermoelectric properties

ASJC Scopus subject areas

Mechanical Engineering
Industrial and Manufacturing Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.2497/jjspm.45.581

Cite this

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title = "Thermoelectric Properties of SiB14-SiB6 Composites Prepared by Arc Melting and Annealing",

abstract = "Si-B system composites were prepared by arc melting using Si and B powders and then annealed in an argon atmosphere. Arc-melted specimens consisted of mainly SiB14 and free Si. SiB6 phase formed at the boundary between SiB14 and free Si at content of 80 to 86mol%B by the annealing at 1670K. The lattice parameter of SiB14 increased with increasing annealing time due to the change of Si to B content ratio in SiB14 phase. The electrical and thermal conductivity of the composites decreased with increasing annealing time, but the Seebeck coefficient (α) showed maxima at the annealing time around 5.4ks. The greatest dimensionless figure-of-merit (ZT) value obtained in this study was 0.14 at T=1100K.",

keywords = "Annealing, Arc melting, High temperature, Silicon boride, Thermoelectric properties",

author = "Jianhui Li and Takashi Goto and Toshio Hirai",

year = "1998",

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T1 - Thermoelectric Properties of SiB14-SiB6 Composites Prepared by Arc Melting and Annealing

AU - Li, Jianhui

AU - Goto, Takashi

AU - Hirai, Toshio

PY - 1998/6

Y1 - 1998/6

N2 - Si-B system composites were prepared by arc melting using Si and B powders and then annealed in an argon atmosphere. Arc-melted specimens consisted of mainly SiB14 and free Si. SiB6 phase formed at the boundary between SiB14 and free Si at content of 80 to 86mol%B by the annealing at 1670K. The lattice parameter of SiB14 increased with increasing annealing time due to the change of Si to B content ratio in SiB14 phase. The electrical and thermal conductivity of the composites decreased with increasing annealing time, but the Seebeck coefficient (α) showed maxima at the annealing time around 5.4ks. The greatest dimensionless figure-of-merit (ZT) value obtained in this study was 0.14 at T=1100K.

AB - Si-B system composites were prepared by arc melting using Si and B powders and then annealed in an argon atmosphere. Arc-melted specimens consisted of mainly SiB14 and free Si. SiB6 phase formed at the boundary between SiB14 and free Si at content of 80 to 86mol%B by the annealing at 1670K. The lattice parameter of SiB14 increased with increasing annealing time due to the change of Si to B content ratio in SiB14 phase. The electrical and thermal conductivity of the composites decreased with increasing annealing time, but the Seebeck coefficient (α) showed maxima at the annealing time around 5.4ks. The greatest dimensionless figure-of-merit (ZT) value obtained in this study was 0.14 at T=1100K.

KW - Annealing

KW - Arc melting

KW - High temperature

KW - Silicon boride

KW - Thermoelectric properties

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