Boron-rich boride composites were prepared by arc-melting in an argon atmosphere, and their microstructures and thermoelectric properties were studied. B4C-TiB2 system was quasi-binary, and the typical lamellar structures indicating a eutectic reaction were observed. The eutectic composition was 25 mol%TiB2, and a 6 mol%TiB2-B4C composite showed the greatest ZT values of 0.55 at 1100 K. The boron-rich region of Si-B-C system contained a peritectic reaction. The specimens consisting of SiB14, B4C and free-Si were prepared. The greatest ZT value of this system was 0.4 at 1100 K for a specimen in which SiB14 is the main phase with several 10 mol% of B4C and free-Si.
|Number of pages||4|
|Publication status||Published - 1998 Dec 1|
|Event||Proceedings of the 1998 17th International Conference on Thermoelectrics, ICT - Nagoya, Jpn|
Duration: 1998 May 24 → 1998 May 28
|Other||Proceedings of the 1998 17th International Conference on Thermoelectrics, ICT|
|Period||98/5/24 → 98/5/28|
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