Thermoelectric properties of boron-rich boride composites prepared through eutectic and peritectic reactions

Takashi Goto, Jianhui Li, Toshio Hirai

Research output: Contribution to conferencePaper

4 Citations (Scopus)

Abstract

Boron-rich boride composites were prepared by arc-melting in an argon atmosphere, and their microstructures and thermoelectric properties were studied. B4C-TiB2 system was quasi-binary, and the typical lamellar structures indicating a eutectic reaction were observed. The eutectic composition was 25 mol%TiB2, and a 6 mol%TiB2-B4C composite showed the greatest ZT values of 0.55 at 1100 K. The boron-rich region of Si-B-C system contained a peritectic reaction. The specimens consisting of SiB14, B4C and free-Si were prepared. The greatest ZT value of this system was 0.4 at 1100 K for a specimen in which SiB14 is the main phase with several 10 mol% of B4C and free-Si.

Original languageEnglish
Pages574-577
Number of pages4
Publication statusPublished - 1998 Dec 1
EventProceedings of the 1998 17th International Conference on Thermoelectrics, ICT - Nagoya, Jpn
Duration: 1998 May 241998 May 28

Other

OtherProceedings of the 1998 17th International Conference on Thermoelectrics, ICT
CityNagoya, Jpn
Period98/5/2498/5/28

ASJC Scopus subject areas

  • Engineering(all)

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    Goto, T., Li, J., & Hirai, T. (1998). Thermoelectric properties of boron-rich boride composites prepared through eutectic and peritectic reactions. 574-577. Paper presented at Proceedings of the 1998 17th International Conference on Thermoelectrics, ICT, Nagoya, Jpn, .