Thermoelectric properties of binary semiconducting intermetallic compounds Al2Ru and Ga2Ru synthesized by spark plasma sintering process

Yoshiki Takagiwa, Yuka Matsubayashi, Akitoshi Suzumura, Junpei Tamura Okada, Kaoru Kimura

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

The authors report the electrical and thermal transport properties of binary semiconducting intermetallic Al2Ru and Ga2Ru compounds from 373 to 973 K. We synthesized sintered pellets of Al2Ru and Ga2Ru by the spark plasma sintering (SPS) method, resulted in a removal of small amount of a secondary phase and of cracks. The maximum Seebeck coefficient of Al2Ru and Ga2Ru shows a large positive value of 200μV/K and 360μV/K, respectively. In particular, a large power factor ∼2.8mW/m-K2 was obtained at 773 K in Ga2Ru compound. The dimensionless figures of merit ZT of sintered Al2Ru and Ga2Ru samples monotonically increase with increasing temperature and reach a maximum value of 0.20 and 0.45 at about 873 K and 773 K, respectively

Original languageEnglish
Pages (from-to)988-993
Number of pages6
JournalMaterials Transactions
Volume51
Issue number5
DOIs
Publication statusPublished - 2010 May

Keywords

  • Narrow-band-gap semiconductor
  • Ruthenium aluminide
  • Ruthenium gallide
  • Spark plasma sintering
  • Thermoelectric material

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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