Thermoelectric properties of Ba-Ge based type-III clathrate compounds

Jung Hwan Kim; Norihiko L. Okamoto; Kyosuke Kishida; Katsushi Tanaka; Haruyuki Inui

Thermoelectric properties of Ba-Ge based type-III clathrate compounds

Jung Hwan Kim, Norihiko L. Okamoto, Kyosuke Kishida, Katsushi Tanaka, Haruyuki Inui

Research output: Contribution to journal › Conference article › peer-review

Abstract

The crystal structures and thermoelectric properties of Ba-Ge based type-III clathrate compounds in Ba-Al-Ge and Ba-In-Ge systems have been investigated as a function of Al and In content. The absolute values of electrical resistivity and Seebeck coefficient increase, while that of lattice thermal conductivity decreases with increasing Al and In content. The increase in electrical resistivity and Seebeck coefficient is discussed in terms of the number of the excess electrons deduced from the Zintl concept, on the other hand, the decrease in lattice thermal conductivity is discussed in terms of an anisotropic deformation of the open-dodecahedron cage encapsulating Ba atom. High ZT values of 0.7 and 0.87 are obtained at 780 and 580 °C for Ba ₂₄Al₁₂Ge₈₈ and Ba₂₄In ₁₆Ge₈₄. respectively.

Original language	English
Pages (from-to)	217-222
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	980
Publication status	Published - 2007 Jun 29
Externally published	Yes
Event	2006 MRS Fall Meeting - Boston, MA, United States Duration: 2006 Nov 27 → 2006 Nov 29

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{6a92ee01ca594f34ad55d17fa2eba390,

title = "Thermoelectric properties of Ba-Ge based type-III clathrate compounds",

abstract = "The crystal structures and thermoelectric properties of Ba-Ge based type-III clathrate compounds in Ba-Al-Ge and Ba-In-Ge systems have been investigated as a function of Al and In content. The absolute values of electrical resistivity and Seebeck coefficient increase, while that of lattice thermal conductivity decreases with increasing Al and In content. The increase in electrical resistivity and Seebeck coefficient is discussed in terms of the number of the excess electrons deduced from the Zintl concept, on the other hand, the decrease in lattice thermal conductivity is discussed in terms of an anisotropic deformation of the open-dodecahedron cage encapsulating Ba atom. High ZT values of 0.7 and 0.87 are obtained at 780 and 580 °C for Ba 24Al12Ge88 and Ba24In 16Ge84. respectively.",

author = "Kim, {Jung Hwan} and Okamoto, {Norihiko L.} and Kyosuke Kishida and Katsushi Tanaka and Haruyuki Inui",

year = "2007",

month = jun,

day = "29",

language = "English",

volume = "980",

pages = "217--222",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2006 MRS Fall Meeting ; Conference date: 27-11-2006 Through 29-11-2006",

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TY - JOUR

T1 - Thermoelectric properties of Ba-Ge based type-III clathrate compounds

AU - Kim, Jung Hwan

AU - Okamoto, Norihiko L.

AU - Kishida, Kyosuke

AU - Tanaka, Katsushi

AU - Inui, Haruyuki

PY - 2007/6/29

Y1 - 2007/6/29

N2 - The crystal structures and thermoelectric properties of Ba-Ge based type-III clathrate compounds in Ba-Al-Ge and Ba-In-Ge systems have been investigated as a function of Al and In content. The absolute values of electrical resistivity and Seebeck coefficient increase, while that of lattice thermal conductivity decreases with increasing Al and In content. The increase in electrical resistivity and Seebeck coefficient is discussed in terms of the number of the excess electrons deduced from the Zintl concept, on the other hand, the decrease in lattice thermal conductivity is discussed in terms of an anisotropic deformation of the open-dodecahedron cage encapsulating Ba atom. High ZT values of 0.7 and 0.87 are obtained at 780 and 580 °C for Ba 24Al12Ge88 and Ba24In 16Ge84. respectively.

AB - The crystal structures and thermoelectric properties of Ba-Ge based type-III clathrate compounds in Ba-Al-Ge and Ba-In-Ge systems have been investigated as a function of Al and In content. The absolute values of electrical resistivity and Seebeck coefficient increase, while that of lattice thermal conductivity decreases with increasing Al and In content. The increase in electrical resistivity and Seebeck coefficient is discussed in terms of the number of the excess electrons deduced from the Zintl concept, on the other hand, the decrease in lattice thermal conductivity is discussed in terms of an anisotropic deformation of the open-dodecahedron cage encapsulating Ba atom. High ZT values of 0.7 and 0.87 are obtained at 780 and 580 °C for Ba 24Al12Ge88 and Ba24In 16Ge84. respectively.

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M3 - Conference article

AN - SCOPUS:34250889299

VL - 980

SP - 217

EP - 222

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - 2006 MRS Fall Meeting

Y2 - 27 November 2006 through 29 November 2006

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