Thermodynamics for the preparation of SiC-C nano-composites by chemical vapour deposition

Y. Wang, M. Sasaki, T. Goto, T. Hirai

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23 Citations (Scopus)


SiC-C nano-composites covering every possible combination of carbon and SiC were prepared by chemical vapour deposition. The specific compositions of the deposits were controlled by changing the Si/C molar ratio in the source gases at deposition temperatures (Tdep) of 1673 to 1873 K and total gas pressures (Ptot) of 6.7 to 40 k Pa using the SiCl4-C3H8-H2 system. The prediction, based on the thermodynamic calculation on composition, morphology and deposition rate, was compared with experimental results. The optimal deposition conditions predicted by the calculations were nearly in agreement with the experimental results.

Original languageEnglish
Pages (from-to)4607-4613
Number of pages7
JournalJournal of Materials Science
Issue number11
Publication statusPublished - 1990 Nov 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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