TY - JOUR
T1 - Thermodynamics for the Chemical Vapor Deposition of SiCl4-TiCl4-CCl4-H2 System
AU - Goto, Takashi
AU - Hirai, Toshio
PY - 1987/1/1
Y1 - 1987/1/1
N2 - The thermodynamic calculations and the experimental results for the chemical vapor deposition of the Si-Ti-C-H-Cl system using SiCl4, TiCl4, CCl4 and H2 as source gases were compared. The thermodynamic calculations well explained the experimental results for the formation of such phases as the SiC+TiC, the SiC+TiC+C and the TiC+Ti3SiC2. The main gas species in equilibrium are (H2), (HCl), (SiCl2) and (TiCl8). The equilibrium (H2) and (HCl) partial pressures are almost independent of temperature. The equilibrium (SiCl2) partial pressure increases with increasing temperature, and the equilibrium (TiCl8) partial pressure decreases with increasing temperature. The theoretical deposition efficiency of <SiC> decreases with increasing temperature, and that of <TiC> increases with increasing temperature. The calculated compositions of SiC/(SiC+TiC) in the SiC+TiC phase were almost in agreement with the experimental values. The calculated compositions of SiC/ (SiC+TiC) decrease with increasing temperature. However the experimentally obtained compositions increased with increasing temperature, which may be caused by the kinetic restriction for the formation of the <SiC> at lower deposition temperatures.
AB - The thermodynamic calculations and the experimental results for the chemical vapor deposition of the Si-Ti-C-H-Cl system using SiCl4, TiCl4, CCl4 and H2 as source gases were compared. The thermodynamic calculations well explained the experimental results for the formation of such phases as the SiC+TiC, the SiC+TiC+C and the TiC+Ti3SiC2. The main gas species in equilibrium are (H2), (HCl), (SiCl2) and (TiCl8). The equilibrium (H2) and (HCl) partial pressures are almost independent of temperature. The equilibrium (SiCl2) partial pressure increases with increasing temperature, and the equilibrium (TiCl8) partial pressure decreases with increasing temperature. The theoretical deposition efficiency of <SiC> decreases with increasing temperature, and that of <TiC> increases with increasing temperature. The calculated compositions of SiC/(SiC+TiC) in the SiC+TiC phase were almost in agreement with the experimental values. The calculated compositions of SiC/ (SiC+TiC) decrease with increasing temperature. However the experimentally obtained compositions increased with increasing temperature, which may be caused by the kinetic restriction for the formation of the <SiC> at lower deposition temperatures.
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U2 - 10.1246/nikkashi.1987.1939
DO - 10.1246/nikkashi.1987.1939
M3 - Article
AN - SCOPUS:84921210962
VL - 1987
SP - 1939
EP - 1945
JO - Nippon Kagaku Kaishi / Chemical Society of Japan - Chemistry and Industrial Chemistry Journal
JF - Nippon Kagaku Kaishi / Chemical Society of Japan - Chemistry and Industrial Chemistry Journal
SN - 0369-4577
IS - 11
ER -