Thermo-mechanical stability of wide-bandgap semiconductors: High temperature hardness of SiC, AlN, GaN, ZnO and ZnSe

I. Yonenaga

Research output: Contribution to journalArticlepeer-review

68 Citations (Scopus)

Abstract

The hardness of single crystals α-SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures was measured by the Vickers indentation method in the temperature range 20-1400°C. The hardness of SiC, AlN, GaN, ZnO and ZnSe is about 25, 18, 11, 5 and 1 GPa, respectively, at room temperature. SiC, AlN and GaN show a decrease in hardness, originating in the beginning of macroscopic dislocation motion and plastic deformation, only at temperature 1200°C. A high thermo-mechanical stability for SiC, GaN and AlN is deduced.

Original languageEnglish
Pages (from-to)1150-1152
Number of pages3
JournalPhysica B: Condensed Matter
Volume308-310
DOIs
Publication statusPublished - 2001 Dec 1

Keywords

  • Hardness
  • Thermo-mechanical stability
  • Wide bandgap semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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