Abstract
The hardness of single crystals α-SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures was measured by the Vickers indentation method in the temperature range 20-1400°C. The hardness of SiC, AlN, GaN, ZnO and ZnSe is about 25, 18, 11, 5 and 1 GPa, respectively, at room temperature. SiC, AlN and GaN show a decrease in hardness, originating in the beginning of macroscopic dislocation motion and plastic deformation, only at temperature 1200°C. A high thermo-mechanical stability for SiC, GaN and AlN is deduced.
Original language | English |
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Pages (from-to) | 1150-1152 |
Number of pages | 3 |
Journal | Physica B: Condensed Matter |
Volume | 308-310 |
DOIs | |
Publication status | Published - 2001 Dec 1 |
Keywords
- Hardness
- Thermo-mechanical stability
- Wide bandgap semiconductors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering