Abstract
The hardness of single crystals α-SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures was measured by the Vickers indentation method in the temperature range 20-1400°C. The hardness of SiC, AlN, GaN, ZnO and ZnSe is about 25, 18, 11, 5 and 1 GPa, respectively, at room temperature. SiC, AlN and GaN show a decrease in hardness, originating in the beginning of macroscopic dislocation motion and plastic deformation, only at temperature 1200°C. A high thermo-mechanical stability for SiC, GaN and AlN is deduced.
| Original language | English |
|---|---|
| Pages (from-to) | 1150-1152 |
| Number of pages | 3 |
| Journal | Physica B: Condensed Matter |
| Volume | 308-310 |
| DOIs | |
| Publication status | Published - 2001 Dec 1 |
Keywords
- Hardness
- Thermo-mechanical stability
- Wide bandgap semiconductors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering