Thermionic and tunneling transport mechanisms in graphene field-effect transistors

Victor Ryzhii, Maxim Ryzhii, Taiichi Otsuji

Research output: Contribution to journalReview articlepeer-review

21 Citations (Scopus)

Abstract

We present an analytical device model for a graphene fieldeffect transistor (GFET) on a highly conducting substrate, playing the role of the back gate, with relatively short top gate which controls the source-drain current The equations of the GFET device model include the Poisson equation in the weak nonlocality approximation. Using this model, we find explicit analytical formulae for the spatial distributions of the electric potential along the channel and for the voltage dependences of the thermionic and tunneling currents.

Original languageEnglish
Pages (from-to)1527-1533
Number of pages7
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume205
Issue number7
DOIs
Publication statusPublished - 2008 Jul

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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