Thermally stable NiSi2 for Ge contact with schottky barrier height modulation capability

R. Yoshihara; Y. Tamura; K. Kakushima; P. Ahmet; Y. Kataoka; A. Nishiyama; N. Sugii; K. Tsutsui; K. Natori; T. Hattori; H. Iwai

doi:10.1149/05009.0217ecst

Thermally stable NiSi₂ for Ge contact with schottky barrier height modulation capability

R. Yoshihara, Y. Tamura, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Agglomeration resistant contact of NiSi₂ with Ge substrates has been performed using stacked silicidation process. Stable Schottky barrier height at NiSi₂/Ge interface with ideality factor of less than 1.2 can be maintained up to annealing temperature of 500°C. Incorporation of P atom at NiSi₂/Ge interface modulates the Schottky barrier height to produce Ohmic contact.

Original language	English
Title of host publication	SiGe, Ge, and Related Compounds 5
Subtitle of host publication	Materials, Processing, and Devices
Pages	217-221
Number of pages	5
Edition	9
DOIs	https://doi.org/10.1149/05009.0217ecst
Publication status	Published - 2012
Externally published	Yes
Event	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States Duration: 2012 Oct 7 → 2012 Oct 12

Publication series

Name	ECS Transactions
Number	9
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country	United States
City	Honolulu, HI
Period	12/10/7 → 12/10/12

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/05009.0217ecst

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Yoshihara, R., Tamura, Y., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., & Iwai, H. (2012). Thermally stable NiSi₂ for Ge contact with schottky barrier height modulation capability. In SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices (9 ed., pp. 217-221). (ECS Transactions; Vol. 50, No. 9). https://doi.org/10.1149/05009.0217ecst

Thermally stable NiSi₂ for Ge contact with schottky barrier height modulation capability. / Yoshihara, R.; Tamura, Y.; Kakushima, K.; Ahmet, P.; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Tsutsui, K.; Natori, K.; Hattori, T.; Iwai, H.

SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9. ed. 2012. p. 217-221 (ECS Transactions; Vol. 50, No. 9).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yoshihara, R, Tamura, Y, Kakushima, K, Ahmet, P, Kataoka, Y, Nishiyama, A, Sugii, N, Tsutsui, K, Natori, K, Hattori, T & Iwai, H 2012, Thermally stable NiSi₂ for Ge contact with schottky barrier height modulation capability. in SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 edn, ECS Transactions, no. 9, vol. 50, pp. 217-221, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, Honolulu, HI, United States, 12/10/7. https://doi.org/10.1149/05009.0217ecst

@inproceedings{42f64d2feab64fbc8d34d2a1df38edf0,

title = "Thermally stable NiSi2 for Ge contact with schottky barrier height modulation capability",

abstract = "Agglomeration resistant contact of NiSi2 with Ge substrates has been performed using stacked silicidation process. Stable Schottky barrier height at NiSi2/Ge interface with ideality factor of less than 1.2 can be maintained up to annealing temperature of 500°C. Incorporation of P atom at NiSi2/Ge interface modulates the Schottky barrier height to produce Ohmic contact.",

author = "R. Yoshihara and Y. Tamura and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai",

year = "2012",

doi = "10.1149/05009.0217ecst",

language = "English",

isbn = "9781607683575",

series = "ECS Transactions",

number = "9",

pages = "217--221",

booktitle = "SiGe, Ge, and Related Compounds 5",

edition = "9",

note = "5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting ; Conference date: 07-10-2012 Through 12-10-2012",

}

TY - GEN

T1 - Thermally stable NiSi2 for Ge contact with schottky barrier height modulation capability

AU - Yoshihara, R.

AU - Tamura, Y.

AU - Kakushima, K.

AU - Ahmet, P.

AU - Kataoka, Y.

AU - Nishiyama, A.

AU - Sugii, N.

AU - Tsutsui, K.

AU - Natori, K.

AU - Hattori, T.

AU - Iwai, H.

PY - 2012

Y1 - 2012

N2 - Agglomeration resistant contact of NiSi2 with Ge substrates has been performed using stacked silicidation process. Stable Schottky barrier height at NiSi2/Ge interface with ideality factor of less than 1.2 can be maintained up to annealing temperature of 500°C. Incorporation of P atom at NiSi2/Ge interface modulates the Schottky barrier height to produce Ohmic contact.

AB - Agglomeration resistant contact of NiSi2 with Ge substrates has been performed using stacked silicidation process. Stable Schottky barrier height at NiSi2/Ge interface with ideality factor of less than 1.2 can be maintained up to annealing temperature of 500°C. Incorporation of P atom at NiSi2/Ge interface modulates the Schottky barrier height to produce Ohmic contact.

UR - http://www.scopus.com/inward/record.url?scp=84885726631&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885726631&partnerID=8YFLogxK

U2 - 10.1149/05009.0217ecst

DO - 10.1149/05009.0217ecst

M3 - Conference contribution

AN - SCOPUS:84885726631

SN - 9781607683575

T3 - ECS Transactions

SP - 217

EP - 221

BT - SiGe, Ge, and Related Compounds 5

T2 - 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting

Y2 - 7 October 2012 through 12 October 2012

ER -