@inproceedings{42f64d2feab64fbc8d34d2a1df38edf0,
title = "Thermally stable NiSi2 for Ge contact with schottky barrier height modulation capability",
abstract = "Agglomeration resistant contact of NiSi2 with Ge substrates has been performed using stacked silicidation process. Stable Schottky barrier height at NiSi2/Ge interface with ideality factor of less than 1.2 can be maintained up to annealing temperature of 500°C. Incorporation of P atom at NiSi2/Ge interface modulates the Schottky barrier height to produce Ohmic contact.",
author = "R. Yoshihara and Y. Tamura and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai",
year = "2013",
doi = "10.1149/05009.0217ecst",
language = "English",
isbn = "9781607683575",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "9",
pages = "217--221",
booktitle = "SiGe, Ge, and Related Compounds 5",
edition = "9",
note = "5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting ; Conference date: 07-10-2012 Through 12-10-2012",
}