Thermally stable NiSi2 for Ge contact with schottky barrier height modulation capability

R. Yoshihara; Y. Tamura; K. Kakushima; P. Ahmet; Y. Kataoka; A. Nishiyama; N. Sugii; K. Tsutsui; K. Natori; T. Hattori; H. Iwai

doi:10.1149/05009.0217ecst

Thermally stable NiSi₂ for Ge contact with schottky barrier height modulation capability

R. Yoshihara, Y. Tamura, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Agglomeration resistant contact of NiSi₂ with Ge substrates has been performed using stacked silicidation process. Stable Schottky barrier height at NiSi₂/Ge interface with ideality factor of less than 1.2 can be maintained up to annealing temperature of 500°C. Incorporation of P atom at NiSi₂/Ge interface modulates the Schottky barrier height to produce Ohmic contact.

Original language	English
Title of host publication	SiGe, Ge, and Related Compounds 5
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	217-221
Number of pages	5
Edition	9
ISBN (Print)	9781607683575
DOIs	https://doi.org/10.1149/05009.0217ecst
Publication status	Published - 2013
Externally published	Yes
Event	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States Duration: 2012 Oct 7 → 2012 Oct 12

Publication series

Name	ECS Transactions
Number	9
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	12/10/7 → 12/10/12

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/05009.0217ecst

Cite this

Yoshihara, R., Tamura, Y., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., & Iwai, H. (2013). Thermally stable NiSi₂ for Ge contact with schottky barrier height modulation capability. In SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices (9 ed., pp. 217-221). (ECS Transactions; Vol. 50, No. 9). Electrochemical Society Inc.. https://doi.org/10.1149/05009.0217ecst

Thermally stable NiSi₂ for Ge contact with schottky barrier height modulation capability. / Yoshihara, R.; Tamura, Y.; Kakushima, K.; Ahmet, P.; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Tsutsui, K.; Natori, K.; Hattori, T.; Iwai, H.

SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9. ed. Electrochemical Society Inc., 2013. p. 217-221 (ECS Transactions; Vol. 50, No. 9).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yoshihara, R, Tamura, Y, Kakushima, K, Ahmet, P, Kataoka, Y, Nishiyama, A, Sugii, N, Tsutsui, K, Natori, K, Hattori, T & Iwai, H 2013, Thermally stable NiSi₂ for Ge contact with schottky barrier height modulation capability. in SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 edn, ECS Transactions, no. 9, vol. 50, Electrochemical Society Inc., pp. 217-221, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, Honolulu, HI, United States, 12/10/7. https://doi.org/10.1149/05009.0217ecst

Yoshihara, R. ; Tamura, Y. ; Kakushima, K. ; Ahmet, P. ; Kataoka, Y. ; Nishiyama, A. ; Sugii, N. ; Tsutsui, K. ; Natori, K. ; Hattori, T. ; Iwai, H. / Thermally stable NiSi₂ for Ge contact with schottky barrier height modulation capability. SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9. ed. Electrochemical Society Inc., 2013. pp. 217-221 (ECS Transactions; 9).

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abstract = "Agglomeration resistant contact of NiSi2 with Ge substrates has been performed using stacked silicidation process. Stable Schottky barrier height at NiSi2/Ge interface with ideality factor of less than 1.2 can be maintained up to annealing temperature of 500°C. Incorporation of P atom at NiSi2/Ge interface modulates the Schottky barrier height to produce Ohmic contact.",

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