Thermally stable CVD HfOxNy advanced gate dielectrics with poly-Si gate electrode

C. H. Choi, S. J. Rhee, T. S. Jeon, N. Lu, J. H. Sim, R. Clark, Masaaki Niwa, D. L. Kwong

Research output: Contribution to journalConference article

130 Citations (Scopus)

Abstract

In this paper, for the first time, we report high quality CVD hafnium oxynitride (HfOxNy) MOSFETs with conventional self-aligned poly-Si gate. These CVD HfOxNy films deposited using TDEAH (Tetrakisdiethylamino hafnium, C16H40N4Hf) arid NH3 remain amorphous after 900∼950 °C annealing. Compared to HfO2, HfOxNy exhibits reduced leakage current by 2∼3 orders of magnitude, excellent boron penetration immunity, superior thermal stability of both EOT and leakage current after high temperature annealing, and excellent reliability.

Original languageEnglish
Pages (from-to)857-860
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2002 Dec 1
Externally publishedYes
Event2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States
Duration: 2002 Dec 82002 Dec 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Choi, C. H., Rhee, S. J., Jeon, T. S., Lu, N., Sim, J. H., Clark, R., Niwa, M., & Kwong, D. L. (2002). Thermally stable CVD HfOxNy advanced gate dielectrics with poly-Si gate electrode. Technical Digest - International Electron Devices Meeting, 857-860.