Thermally induced effects in amorphous GeSe2 and GeSe films studied by ultraviolet photoelectron spectroscopy

S. Hino; T. Takahashi; Y. Harada

doi:10.1016/0038-1098(80)90520-7

Thermally induced effects in amorphous GeSe₂ and GeSe films studied by ultraviolet photoelectron spectroscopy

S. Hino, T. Takahashi, Y. Harada

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

During thermal annealing, the changes in the valence states of amorphous GeSe₂ and GeSe films deposited on the substrates held at 77 K were observed by UPS. The experimental results are explained in terms of the four (Ge)-two (Se) fold coordination for amorphous GeSe₂ and the three(Ge)-three(Se) fold one for amorphous GeSe.

Original language	English
Pages (from-to)	379-382
Number of pages	4
Journal	Solid State Communications
Volume	35
Issue number	4
DOIs	https://doi.org/10.1016/0038-1098(80)90520-7
Publication status	Published - 1980 Jul

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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abstract = "During thermal annealing, the changes in the valence states of amorphous GeSe2 and GeSe films deposited on the substrates held at 77 K were observed by UPS. The experimental results are explained in terms of the four (Ge)-two (Se) fold coordination for amorphous GeSe2 and the three(Ge)-three(Se) fold one for amorphous GeSe.",

author = "S. Hino and T. Takahashi and Y. Harada",

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