TY - JOUR
T1 - Thermally induced effects in amorphous GeSe2 and GeSe films studied by ultraviolet photoelectron spectroscopy
AU - Hino, S.
AU - Takahashi, T.
AU - Harada, Y.
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 1980/7
Y1 - 1980/7
N2 - During thermal annealing, the changes in the valence states of amorphous GeSe2 and GeSe films deposited on the substrates held at 77 K were observed by UPS. The experimental results are explained in terms of the four (Ge)-two (Se) fold coordination for amorphous GeSe2 and the three(Ge)-three(Se) fold one for amorphous GeSe.
AB - During thermal annealing, the changes in the valence states of amorphous GeSe2 and GeSe films deposited on the substrates held at 77 K were observed by UPS. The experimental results are explained in terms of the four (Ge)-two (Se) fold coordination for amorphous GeSe2 and the three(Ge)-three(Se) fold one for amorphous GeSe.
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U2 - 10.1016/0038-1098(80)90520-7
DO - 10.1016/0038-1098(80)90520-7
M3 - Article
AN - SCOPUS:0019038064
VL - 35
SP - 379
EP - 382
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 4
ER -