Thermally induced effects in amorphous GeSe2 and GeSe films studied by ultraviolet photoelectron spectroscopy

S. Hino, T. Takahashi, Y. Harada

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

During thermal annealing, the changes in the valence states of amorphous GeSe2 and GeSe films deposited on the substrates held at 77 K were observed by UPS. The experimental results are explained in terms of the four (Ge)-two (Se) fold coordination for amorphous GeSe2 and the three(Ge)-three(Se) fold one for amorphous GeSe.

Original languageEnglish
Pages (from-to)379-382
Number of pages4
JournalSolid State Communications
Volume35
Issue number4
DOIs
Publication statusPublished - 1980 Jul

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Thermally induced effects in amorphous GeSe<sub>2</sub> and GeSe films studied by ultraviolet photoelectron spectroscopy'. Together they form a unique fingerprint.

Cite this