Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy

S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, K. Iwamoto, T. Sukegawa, Z. Liu

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We have investigated the thermal stability of TiN/HfSiON gate stack structures using synchrotron-radiation photoemission spectroscopy. Spectral intensities of the Si-oxide components in Si 2p core-level spectra systematically increase with annealing temperature, which strongly depends on the thickness of the TiN metal gate layer. Changes brought by annealing procedures in depth profiles of atomic concentration indicate segregation of Si-atoms at the TiN surface. Furthermore, chemical-state-resolved depth analyses by angle-resolved photoemission spectroscopy suggest formation of TiSi x and HfNy components due to chemical bond breaking in the HfSiON layer during TiN film growth. This can be related to the degradation of thermal stability.

Original languageEnglish
Article number262903
JournalApplied Physics Letters
Volume97
Issue number26
DOIs
Publication statusPublished - 2010 Dec 27
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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