THERMAL STABILITY OF STRAIN-INDUCED DEFECTS IN SILICON.

I. Yonenaga, K. Sumino

Research output: Contribution to journalConference articlepeer-review

Abstract

A study has been made by electron microscopy of the effects of plastic-strain and annealing temperatures on the numbers and distributions of defects introduced into silicon by strain.

Original languageEnglish
Pages (from-to)23-26
Number of pages4
JournalBulletin of the Academy of Sciences of the U.S.S.R. Physical series
Volume51
Issue number9
Publication statusPublished - 1986 Dec 1
EventProc of the Fifth Int Conf on the Struct and Prop of Dislocat in Semicond - Moscow, USSR
Duration: 1986 Mar 171986 Mar 22

ASJC Scopus subject areas

  • Engineering(all)

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