A study has been made by electron microscopy of the effects of plastic-strain and annealing temperatures on the numbers and distributions of defects introduced into silicon by strain.
|Number of pages||4|
|Journal||Bulletin of the Academy of Sciences of the U.S.S.R. Physical series|
|Publication status||Published - 1986 Dec 1|
|Event||Proc of the Fifth Int Conf on the Struct and Prop of Dislocat in Semicond - Moscow, USSR|
Duration: 1986 Mar 17 → 1986 Mar 22
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