THERMAL STABILITY OF STRAIN-INDUCED DEFECTS IN SILICON.

I. Yonenaga; K. Sumino

THERMAL STABILITY OF STRAIN-INDUCED DEFECTS IN SILICON.

I. Yonenaga, K. Sumino

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

Abstract

A study has been made by electron microscopy of the effects of plastic-strain and annealing temperatures on the numbers and distributions of defects introduced into silicon by strain.

Original language	English
Pages (from-to)	23-26
Number of pages	4
Journal	Bulletin of the Academy of Sciences of the U.S.S.R. Physical series
Volume	51
Issue number	9
Publication status	Published - 1986 Dec 1
Event	Proc of the Fifth Int Conf on the Struct and Prop of Dislocat in Semicond - Moscow, USSR Duration: 1986 Mar 17 → 1986 Mar 22

ASJC Scopus subject areas

Engineering(all)

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title = "THERMAL STABILITY OF STRAIN-INDUCED DEFECTS IN SILICON.",

abstract = "A study has been made by electron microscopy of the effects of plastic-strain and annealing temperatures on the numbers and distributions of defects introduced into silicon by strain.",

author = "I. Yonenaga and K. Sumino",

year = "1986",

month = dec,

day = "1",

language = "English",

volume = "51",

pages = "23--26",

journal = "Bulletin of the Russian Academy of Sciences: Physics",

issn = "1062-8738",

publisher = "Allerton Press Inc.",

number = "9",

note = "Proc of the Fifth Int Conf on the Struct and Prop of Dislocat in Semicond ; Conference date: 17-03-1986 Through 22-03-1986",

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T1 - THERMAL STABILITY OF STRAIN-INDUCED DEFECTS IN SILICON.

AU - Yonenaga, I.

AU - Sumino, K.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - A study has been made by electron microscopy of the effects of plastic-strain and annealing temperatures on the numbers and distributions of defects introduced into silicon by strain.

AB - A study has been made by electron microscopy of the effects of plastic-strain and annealing temperatures on the numbers and distributions of defects introduced into silicon by strain.

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M3 - Conference article

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EP - 26

JO - Bulletin of the Russian Academy of Sciences: Physics

JF - Bulletin of the Russian Academy of Sciences: Physics

SN - 1062-8738

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T2 - Proc of the Fifth Int Conf on the Struct and Prop of Dislocat in Semicond

Y2 - 17 March 1986 through 22 March 1986

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