Thermal stability of Gd2O3/Si(100) interfacial transition layer

H. Nohira; T. Yoshida; H. Okamoto; S. Shinagawa; W. Sakai; K. Nakajima; M. Suzuki; K. Kimura; Ng Jin Aun; Y. Kobayashi; S. Ohmi; H. Iwai; E. Ikenaga; Y. Takata; K. Kobayashi; T. Hattori

doi:10.1051/jp4:2006132052

Thermal stability of Gd₂O₃/Si(100) interfacial transition layer

H. Nohira, T. Yoshida, H. Okamoto, S. Shinagawa, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, Ng Jin Aun, Y. Kobayashi, S. Ohmi, H. Iwai, E. Ikenaga, Y. Takata, K. Kobayashi, T. Hattori

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Thermal stability of Gd₂O₃/Si(100) interfacial transition layer was studied by analyzing the angle-resolved Si 2p and Gd 4d photoelectron spectra. Following results were obtained: The compositional depth profile of Gd₂o₃/Si(100) changed slightly by post deposition annealing (PDA) in nitrogen gas under atmospheric pressure below 300°C. The analyses of O 1s and Si 2p spectra indicated that the Gd-silicate consisting of Gd-O-Si bonds was produced near the Gd ₂O₃/Si(100) interface without annealing arid the amount of Gd-silicate increased by PDA above 400°C.

Original language	English
Title of host publication	Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
Pages	273-277
Number of pages	5
DOIs	https://doi.org/10.1051/jp4:2006132052
Publication status	Published - 2006 Mar
Event	ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces - Aix-en-Provence, France Duration: 2005 Jul 3 → 2005 Jul 8

Publication series

Name	Journal De Physique. IV : JP
Volume	132
ISSN (Print)	1155-4339
ISSN (Electronic)	1764-7177

Other

Other	ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
Country	France
City	Aix-en-Provence
Period	05/7/3 → 05/7/8

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1051/jp4:2006132052

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Nohira, H., Yoshida, T., Okamoto, H., Shinagawa, S., Sakai, W., Nakajima, K., Suzuki, M., Kimura, K., Aun, N. J., Kobayashi, Y., Ohmi, S., Iwai, H., Ikenaga, E., Takata, Y., Kobayashi, K., & Hattori, T. (2006). Thermal stability of Gd₂O₃/Si(100) interfacial transition layer. In Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces (pp. 273-277). (Journal De Physique. IV : JP; Vol. 132). https://doi.org/10.1051/jp4:2006132052

Thermal stability of Gd₂O₃/Si(100) interfacial transition layer. / Nohira, H.; Yoshida, T.; Okamoto, H.; Shinagawa, S.; Sakai, W.; Nakajima, K.; Suzuki, M.; Kimura, K.; Aun, Ng Jin; Kobayashi, Y.; Ohmi, S.; Iwai, H.; Ikenaga, E.; Takata, Y.; Kobayashi, K.; Hattori, T.

Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces. 2006. p. 273-277 (Journal De Physique. IV : JP; Vol. 132).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nohira, H, Yoshida, T, Okamoto, H, Shinagawa, S, Sakai, W, Nakajima, K, Suzuki, M, Kimura, K, Aun, NJ, Kobayashi, Y, Ohmi, S, Iwai, H, Ikenaga, E, Takata, Y, Kobayashi, K & Hattori, T 2006, Thermal stability of Gd₂O₃/Si(100) interfacial transition layer. in Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces. Journal De Physique. IV : JP, vol. 132, pp. 273-277, ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces, Aix-en-Provence, France, 05/7/3. https://doi.org/10.1051/jp4:2006132052

Nohira, H. ; Yoshida, T. ; Okamoto, H. ; Shinagawa, S. ; Sakai, W. ; Nakajima, K. ; Suzuki, M. ; Kimura, K. ; Aun, Ng Jin ; Kobayashi, Y. ; Ohmi, S. ; Iwai, H. ; Ikenaga, E. ; Takata, Y. ; Kobayashi, K. ; Hattori, T. / Thermal stability of Gd₂O₃/Si(100) interfacial transition layer. Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces. 2006. pp. 273-277 (Journal De Physique. IV : JP).

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title = "Thermal stability of Gd2O3/Si(100) interfacial transition layer",

abstract = "Thermal stability of Gd2O3/Si(100) interfacial transition layer was studied by analyzing the angle-resolved Si 2p and Gd 4d photoelectron spectra. Following results were obtained: The compositional depth profile of Gd2o3/Si(100) changed slightly by post deposition annealing (PDA) in nitrogen gas under atmospheric pressure below 300°C. The analyses of O 1s and Si 2p spectra indicated that the Gd-silicate consisting of Gd-O-Si bonds was produced near the Gd 2O3/Si(100) interface without annealing arid the amount of Gd-silicate increased by PDA above 400°C.",

author = "H. Nohira and T. Yoshida and H. Okamoto and S. Shinagawa and W. Sakai and K. Nakajima and M. Suzuki and K. Kimura and Aun, {Ng Jin} and Y. Kobayashi and S. Ohmi and H. Iwai and E. Ikenaga and Y. Takata and K. Kobayashi and T. Hattori",

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doi = "10.1051/jp4:2006132052",

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AU - Nohira, H.

AU - Yoshida, T.

AU - Okamoto, H.

AU - Shinagawa, S.

AU - Sakai, W.

AU - Nakajima, K.

AU - Suzuki, M.

AU - Kimura, K.

AU - Aun, Ng Jin

AU - Kobayashi, Y.

AU - Ohmi, S.

AU - Iwai, H.

AU - Ikenaga, E.

AU - Takata, Y.

AU - Kobayashi, K.

AU - Hattori, T.

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N2 - Thermal stability of Gd2O3/Si(100) interfacial transition layer was studied by analyzing the angle-resolved Si 2p and Gd 4d photoelectron spectra. Following results were obtained: The compositional depth profile of Gd2o3/Si(100) changed slightly by post deposition annealing (PDA) in nitrogen gas under atmospheric pressure below 300°C. The analyses of O 1s and Si 2p spectra indicated that the Gd-silicate consisting of Gd-O-Si bonds was produced near the Gd 2O3/Si(100) interface without annealing arid the amount of Gd-silicate increased by PDA above 400°C.

AB - Thermal stability of Gd2O3/Si(100) interfacial transition layer was studied by analyzing the angle-resolved Si 2p and Gd 4d photoelectron spectra. Following results were obtained: The compositional depth profile of Gd2o3/Si(100) changed slightly by post deposition annealing (PDA) in nitrogen gas under atmospheric pressure below 300°C. The analyses of O 1s and Si 2p spectra indicated that the Gd-silicate consisting of Gd-O-Si bonds was produced near the Gd 2O3/Si(100) interface without annealing arid the amount of Gd-silicate increased by PDA above 400°C.

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