Thermal stability of Gd2O3/Si(100) interfacial transition layer

H. Nohira, T. Yoshida, H. Okamoto, S. Shinagawa, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, Ng Jin Aun, Y. Kobayashi, S. Ohmi, H. Iwai, E. Ikenaga, Y. Takata, K. Kobayashi, T. Hattori

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Thermal stability of Gd2O3/Si(100) interfacial transition layer was studied by analyzing the angle-resolved Si 2p and Gd 4d photoelectron spectra. Following results were obtained: The compositional depth profile of Gd2o3/Si(100) changed slightly by post deposition annealing (PDA) in nitrogen gas under atmospheric pressure below 300°C. The analyses of O 1s and Si 2p spectra indicated that the Gd-silicate consisting of Gd-O-Si bonds was produced near the Gd 2O3/Si(100) interface without annealing arid the amount of Gd-silicate increased by PDA above 400°C.

    Original languageEnglish
    Title of host publicationProceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
    Pages273-277
    Number of pages5
    DOIs
    Publication statusPublished - 2006 Mar
    EventICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces - Aix-en-Provence, France
    Duration: 2005 Jul 32005 Jul 8

    Publication series

    NameJournal De Physique. IV : JP
    Volume132
    ISSN (Print)1155-4339
    ISSN (Electronic)1764-7177

    Other

    OtherICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
    CountryFrance
    CityAix-en-Provence
    Period05/7/305/7/8

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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