Abstract
Thermal stability of Gd2O3/Si(100) interfacial transition layer was studied by analyzing the angle-resolved Si 2p and Gd 4d photoelectron spectra. Following results were obtained: The compositional depth profile of Gd2o3/Si(100) changed slightly by post deposition annealing (PDA) in nitrogen gas under atmospheric pressure below 300°C. The analyses of O 1s and Si 2p spectra indicated that the Gd-silicate consisting of Gd-O-Si bonds was produced near the Gd 2O3/Si(100) interface without annealing arid the amount of Gd-silicate increased by PDA above 400°C.
Original language | English |
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Title of host publication | Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces |
Pages | 273-277 |
Number of pages | 5 |
DOIs | |
Publication status | Published - 2006 Mar |
Externally published | Yes |
Event | ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces - Aix-en-Provence, France Duration: 2005 Jul 3 → 2005 Jul 8 |
Publication series
Name | Journal De Physique. IV : JP |
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Volume | 132 |
ISSN (Print) | 1155-4339 |
ISSN (Electronic) | 1764-7177 |
Other
Other | ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces |
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Country/Territory | France |
City | Aix-en-Provence |
Period | 05/7/3 → 05/7/8 |
ASJC Scopus subject areas
- Physics and Astronomy(all)