Thermal stability of fullerene (C70) on the Si(100) 2×1 surface studied with FI-STM

Xiang Dong Wang, Qikun Xue, T. Hashizume, H. Shinohara, Y. Saito, Y. Nishina, T. Sakurai

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    We have studied the thermal stability of fullerene C70 adsorbed on the Si(100)2×1 surface with the field ion-scanning tunneling microscope. The results show that the first layer of C70 adsorbed considerably strongly due to the existence of Si dangling bonds on the surface. The first layer passivated the surface efficiently so that the multilayer crystalline film could be grown as close-packing array. The C70 above the first layer can be easily desorbed at temperatures above approximately 250°C, which is similar to that of bulk C70. In contrast to that, the first layer remains stable without any evidence of cage breaking or reordering until at temperatures above 1000°C, resulting in well-ordered islands: β-SiC(100)3×2 surface, according to our STM observations. The present work reveals a novel fullerene property on the Si(100)2×1 surface.

    Original languageEnglish
    Pages (from-to)334-339
    Number of pages6
    JournalApplied Surface Science
    Volume76-77
    Issue numberC
    DOIs
    Publication statusPublished - 1994 Mar 2

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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    Wang, X. D., Xue, Q., Hashizume, T., Shinohara, H., Saito, Y., Nishina, Y., & Sakurai, T. (1994). Thermal stability of fullerene (C70) on the Si(100) 2×1 surface studied with FI-STM. Applied Surface Science, 76-77(C), 334-339. https://doi.org/10.1016/0169-4332(94)90364-6