Thermal Stability of Copper-Aluminum Alloy Thin Films for Barrierless Copper Metallization on Silicon Substrate

C. P. Wang, T. Dai, Y. Lu, Z. Shi, J. J. Ruan, Y. H. Guo, X. J. Liu

Research output: Contribution to journalArticlepeer-review

Abstract

Copper thin films with thickness of about 500 nm doped with different aluminum concentrations have been prepared by magnetron sputtering on Si substrate and their crystal structure, microstructure, and electrical resistivity after annealing at various temperatures (200°C to 600°C) for 1 h or at 400°C for different durations (1 h to 11 h) investigated by grazing-incidence x-ray diffraction (GIXRD) analysis, scanning electron microscopy (SEM), and four-point probe (FPP) measurements. Cu-1.8Al alloy thin film exhibited good thermal stability and low electrical resistivity (∼5.0 μΩ cm) after annealing at 500°C for 1 h or 400°C for 7 h. No copper silicide was observed at the Cu-Al/Si interface by GIXRD analysis or SEM for this sample. This result indicates that doping Cu thin film with small amounts of Al can achieve high thermal stability and low electrical resistivity, suggesting that Cu-1.8Al alloy thin film could be used for barrierless Cu metallization on Si substrate.

Original languageEnglish
Pages (from-to)4891-4897
Number of pages7
JournalJournal of Electronic Materials
Volume46
Issue number8
DOIs
Publication statusPublished - 2017 Aug 1
Externally publishedYes

Keywords

  • Cu thin film
  • barrierless Cu metallization
  • magnetron sputtering
  • thermal stability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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