Thermal stability in a-Si/HfSiO (N) /Si gate stack structures studied by photoemission spectroscopy using synchrotron radiation

S. Toyoda; H. Kamada; T. Tanimura; H. Kumigashira; M. Oshima; G. L. Liu; Z. Liu; K. Ikeda

doi:10.1063/1.2998578

Thermal stability in a-Si/HfSiO (N) /Si gate stack structures studied by photoemission spectroscopy using synchrotron radiation

S. Toyoda, H. Kamada, T. Tanimura, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, K. Ikeda

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We have investigated thermal stability in amorphous-Si/HfSiO(N) gate stack structures using synchrotron-radiation photoemission spectroscopy. Core-level photoemission spectra depending on annealing temperature have revealed the mechanism of metallization reaction at the upper interface between a-Si cap layer and HfSiO(N) films under ultrahigh vacuum annealing. Silicidation reaction starts by annealing at 700 °C for both HfSiO and HfSiON films. By annealing at 800 °C, metallization reaction is rapidly promoted for the HfSiO film, while the Hf-silicide component changes into the Hf-nitride component due to its thermal stability and metallization reaction mildly proceeds for the HfSiON films.

Original language	English
Article number	182906
Journal	Applied Physics Letters
Volume	93
Issue number	18
DOIs	https://doi.org/10.1063/1.2998578
Publication status	Published - 2008 Nov 17
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{1dcdd534628f4465bc28f0e8549c2cb8,

title = "Thermal stability in a-Si/HfSiO (N) /Si gate stack structures studied by photoemission spectroscopy using synchrotron radiation",

abstract = "We have investigated thermal stability in amorphous-Si/HfSiO(N) gate stack structures using synchrotron-radiation photoemission spectroscopy. Core-level photoemission spectra depending on annealing temperature have revealed the mechanism of metallization reaction at the upper interface between a-Si cap layer and HfSiO(N) films under ultrahigh vacuum annealing. Silicidation reaction starts by annealing at 700 °C for both HfSiO and HfSiON films. By annealing at 800 °C, metallization reaction is rapidly promoted for the HfSiO film, while the Hf-silicide component changes into the Hf-nitride component due to its thermal stability and metallization reaction mildly proceeds for the HfSiON films.",

author = "S. Toyoda and H. Kamada and T. Tanimura and H. Kumigashira and M. Oshima and Liu, {G. L.} and Z. Liu and K. Ikeda",

year = "2008",

month = nov,

day = "17",

doi = "10.1063/1.2998578",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - Thermal stability in a-Si/HfSiO (N) /Si gate stack structures studied by photoemission spectroscopy using synchrotron radiation

AU - Toyoda, S.

AU - Kamada, H.

AU - Tanimura, T.

AU - Kumigashira, H.

AU - Oshima, M.

AU - Liu, G. L.

AU - Liu, Z.

AU - Ikeda, K.

PY - 2008/11/17

Y1 - 2008/11/17

N2 - We have investigated thermal stability in amorphous-Si/HfSiO(N) gate stack structures using synchrotron-radiation photoemission spectroscopy. Core-level photoemission spectra depending on annealing temperature have revealed the mechanism of metallization reaction at the upper interface between a-Si cap layer and HfSiO(N) films under ultrahigh vacuum annealing. Silicidation reaction starts by annealing at 700 °C for both HfSiO and HfSiON films. By annealing at 800 °C, metallization reaction is rapidly promoted for the HfSiO film, while the Hf-silicide component changes into the Hf-nitride component due to its thermal stability and metallization reaction mildly proceeds for the HfSiON films.

AB - We have investigated thermal stability in amorphous-Si/HfSiO(N) gate stack structures using synchrotron-radiation photoemission spectroscopy. Core-level photoemission spectra depending on annealing temperature have revealed the mechanism of metallization reaction at the upper interface between a-Si cap layer and HfSiO(N) films under ultrahigh vacuum annealing. Silicidation reaction starts by annealing at 700 °C for both HfSiO and HfSiON films. By annealing at 800 °C, metallization reaction is rapidly promoted for the HfSiO film, while the Hf-silicide component changes into the Hf-nitride component due to its thermal stability and metallization reaction mildly proceeds for the HfSiON films.

UR - http://www.scopus.com/inward/record.url?scp=55849113026&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=55849113026&partnerID=8YFLogxK

U2 - 10.1063/1.2998578

DO - 10.1063/1.2998578

M3 - Article

AN - SCOPUS:55849113026

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 182906

ER -