Thermal stability in a-Si/HfSiO (N) /Si gate stack structures studied by photoemission spectroscopy using synchrotron radiation

S. Toyoda, H. Kamada, T. Tanimura, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, K. Ikeda

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10 Citations (Scopus)

Abstract

We have investigated thermal stability in amorphous-Si/HfSiO(N) gate stack structures using synchrotron-radiation photoemission spectroscopy. Core-level photoemission spectra depending on annealing temperature have revealed the mechanism of metallization reaction at the upper interface between a-Si cap layer and HfSiO(N) films under ultrahigh vacuum annealing. Silicidation reaction starts by annealing at 700 °C for both HfSiO and HfSiON films. By annealing at 800 °C, metallization reaction is rapidly promoted for the HfSiO film, while the Hf-silicide component changes into the Hf-nitride component due to its thermal stability and metallization reaction mildly proceeds for the HfSiON films.

Original languageEnglish
Article number182906
JournalApplied Physics Letters
Volume93
Issue number18
DOIs
Publication statusPublished - 2008 Nov 17
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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