Thermal-stability improvement of LaON thin film formed using nitrogen radicals

S. Sato; K. Tachi; K. Kakushima; P. Ahmet; K. Tsutsui; N. Sugii; T. Hattori; H. Iwai

doi:10.1016/j.mee.2007.04.088

Thermal-stability improvement of LaON thin film formed using nitrogen radicals

S. Sato, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

This work reports the influence of nitridation on structural and electrical properties of La₂O₃ gate dielectric films. The issue of La₂O₃ is EOT increase after high temperature post metarization annealing (PMA). To overcome this problem, we incorporated nitrogen in La₂O₃. The EOT increase on the TaN/LaON and W/LaON structure is reduced compared with that on the W/La₂O₃ structure. This is due to nitrogen in LaON and SiN_x-rich interfacial layer which seems to remain after high temperature annealing. W/LaON nMOSFET is also successfully fabricated. Peak electron mobility of 96.2 cm²/V s was obtained.

Original language	English
Pages (from-to)	1894-1897
Number of pages	4
Journal	Microelectronic Engineering
Volume	84
Issue number	9-10
DOIs	https://doi.org/10.1016/j.mee.2007.04.088
Publication status	Published - 2007 Sep

Keywords

EOT
Lanthanum oxide
Lanthanum oxynitride
MOSFET
Nitrogen radical

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2007.04.088

Cite this

@article{472b0c5d253542b0a3d24d447b9f96a6,

title = "Thermal-stability improvement of LaON thin film formed using nitrogen radicals",

abstract = "This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. The issue of La2O3 is EOT increase after high temperature post metarization annealing (PMA). To overcome this problem, we incorporated nitrogen in La2O3. The EOT increase on the TaN/LaON and W/LaON structure is reduced compared with that on the W/La2O3 structure. This is due to nitrogen in LaON and SiNx-rich interfacial layer which seems to remain after high temperature annealing. W/LaON nMOSFET is also successfully fabricated. Peak electron mobility of 96.2 cm2/V s was obtained.",

keywords = "EOT, Lanthanum oxide, Lanthanum oxynitride, MOSFET, Nitrogen radical",

author = "S. Sato and K. Tachi and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai",

year = "2007",

month = sep,

doi = "10.1016/j.mee.2007.04.088",

language = "English",

volume = "84",

pages = "1894--1897",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "9-10",

}

TY - JOUR

T1 - Thermal-stability improvement of LaON thin film formed using nitrogen radicals

AU - Sato, S.

AU - Tachi, K.

AU - Kakushima, K.

AU - Ahmet, P.

AU - Tsutsui, K.

AU - Sugii, N.

AU - Hattori, T.

AU - Iwai, H.

PY - 2007/9

Y1 - 2007/9

N2 - This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. The issue of La2O3 is EOT increase after high temperature post metarization annealing (PMA). To overcome this problem, we incorporated nitrogen in La2O3. The EOT increase on the TaN/LaON and W/LaON structure is reduced compared with that on the W/La2O3 structure. This is due to nitrogen in LaON and SiNx-rich interfacial layer which seems to remain after high temperature annealing. W/LaON nMOSFET is also successfully fabricated. Peak electron mobility of 96.2 cm2/V s was obtained.

AB - This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. The issue of La2O3 is EOT increase after high temperature post metarization annealing (PMA). To overcome this problem, we incorporated nitrogen in La2O3. The EOT increase on the TaN/LaON and W/LaON structure is reduced compared with that on the W/La2O3 structure. This is due to nitrogen in LaON and SiNx-rich interfacial layer which seems to remain after high temperature annealing. W/LaON nMOSFET is also successfully fabricated. Peak electron mobility of 96.2 cm2/V s was obtained.

KW - EOT

KW - Lanthanum oxide

KW - Lanthanum oxynitride

KW - MOSFET

KW - Nitrogen radical

UR - http://www.scopus.com/inward/record.url?scp=34248674924&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34248674924&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2007.04.088

DO - 10.1016/j.mee.2007.04.088

M3 - Article

AN - SCOPUS:34248674924

VL - 84

SP - 1894

EP - 1897

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 9-10

ER -

Thermal-stability improvement of LaON thin film formed using nitrogen radicals

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this