The Si(103) surface is studied by means of low-energy electron diffraction and scanning tunneling microscopy. It has been found that the clean Si(103) surface is stable against faceting, that at the room temperature the thermally equilibrium clean Si(103) surface is, surprisingly, rough but semiconducting and its topmost thin layer is disordered, and that the rough morphology is not a result of the thermodynamic roughening transition but because it has a lower internal energy than that of the flat surface. That Si(103) neither facets to Si(113) facets nor consists of Si(113) nanofacets indicates that it does not belong to the Si(113) family; in contrast, Ge(103) does belong to the Ge(113) family. This difference supports the conclusion that the atomic structure of the Ge(113) surface is different from that of the Si(113) surface.
|Number of pages||6|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 1999|
ASJC Scopus subject areas
- Condensed Matter Physics