TY - JOUR
T1 - Thermal stability and electrical properties of Ni-silicide on C-incorporated Si
AU - Nakatsuka, Osamu
AU - Okubo, Kazuya
AU - Sakai, Akira
AU - Ogawa, Masaki
AU - Zaima, Shigeaki
AU - Murota, Junichi
AU - Yasuda, Yukio
PY - 2004/12/1
Y1 - 2004/12/1
N2 - Thermal stability and electrical properties of Ni-silicide on C-implanted Si were investigated. C implantation at a dose below 3×10 15 cm -2 into Si effectively suppressed NiSi agglomeration, leading to the prevention of sheet resistance increase of NiSi. B diffusion from Ni silicide layer into Si substrate is effectively suppressed during silicidation and higher concentration of B at the NiSi/Si interface leads to the reduction of contact resistance. C implantation does not significantly influence the leakage current of p +/n junctions below NiSi/p +-Si contacts at room temperature.
AB - Thermal stability and electrical properties of Ni-silicide on C-implanted Si were investigated. C implantation at a dose below 3×10 15 cm -2 into Si effectively suppressed NiSi agglomeration, leading to the prevention of sheet resistance increase of NiSi. B diffusion from Ni silicide layer into Si substrate is effectively suppressed during silicidation and higher concentration of B at the NiSi/Si interface leads to the reduction of contact resistance. C implantation does not significantly influence the leakage current of p +/n junctions below NiSi/p +-Si contacts at room temperature.
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M3 - Conference article
AN - SCOPUS:23844498133
SP - 293
EP - 298
JO - Advanced Metallization Conference (AMC)
JF - Advanced Metallization Conference (AMC)
SN - 1540-1766
T2 - Advanced Metallization Conference 2004, AMC 2004
Y2 - 19 October 2004 through 21 October 2004
ER -