Thermal stability and electrical properties of Ni-silicide on C-incorporated Si

Osamu Nakatsuka, Kazuya Okubo, Akira Sakai, Masaki Ogawa, Shigeaki Zaima, Junichi Murota, Yukio Yasuda

Research output: Contribution to journalConference articlepeer-review

Abstract

Thermal stability and electrical properties of Ni-silicide on C-implanted Si were investigated. C implantation at a dose below 3×10 15 cm -2 into Si effectively suppressed NiSi agglomeration, leading to the prevention of sheet resistance increase of NiSi. B diffusion from Ni silicide layer into Si substrate is effectively suppressed during silicidation and higher concentration of B at the NiSi/Si interface leads to the reduction of contact resistance. C implantation does not significantly influence the leakage current of p +/n junctions below NiSi/p +-Si contacts at room temperature.

Original languageEnglish
Pages (from-to)293-298
Number of pages6
JournalAdvanced Metallization Conference (AMC)
Publication statusPublished - 2004 Dec 1
EventAdvanced Metallization Conference 2004, AMC 2004 - San Diego, CA, United States
Duration: 2004 Oct 192004 Oct 21

ASJC Scopus subject areas

  • Chemical Engineering(all)

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