Thermal stability and electrical properties of Ni-silicide on C-implanted Si were investigated. C implantation at a dose below 3×10 15 cm -2 into Si effectively suppressed NiSi agglomeration, leading to the prevention of sheet resistance increase of NiSi. B diffusion from Ni silicide layer into Si substrate is effectively suppressed during silicidation and higher concentration of B at the NiSi/Si interface leads to the reduction of contact resistance. C implantation does not significantly influence the leakage current of p +/n junctions below NiSi/p +-Si contacts at room temperature.
ASJC Scopus subject areas
- Chemical Engineering(all)