Thermal-shock Resistance of SiC-C Functionally Gradient Material(FGM) Prepared by Chemical Vapor Deposition

Makoto Sasaki, Yucong Wang, Akira Ohkubo, Toshiyuki Hashida, Toshio Hirai, Hideaki Takahashi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Thermal stress calculated in SiC/C⋅FGM was considerably smaller than that of SiC monolith. The preparation of SiC/C⋅FGM, having the graded concentration predicted from the calculation, was tried by using CVD technique under the following conditions; a SiCl4-CH4-H2 system, a deposition temperature of 1773K, total gas pressure of 1.3kPa. The film(thickness of 0.4mm) having a compositional gradient from C to SiC was obtained on a graphite substrate by changing the Si/C ratio in the gas phase during the deposition. Many small pores were observed in the range of 40~60 mol%C. SiC/C⋅FGM was not broken under cyclic high temperature heat flow conditions (heat flux=0. 7MW⋅m-2), but SiC monolith was broken under the same conditions.

Original languageEnglish
Pages (from-to)271-274
Number of pages4
Journaljournal of the japan society of powder and powder metallurgy
Volume37
Issue number2
DOIs
Publication statusPublished - 1990

ASJC Scopus subject areas

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Metals and Alloys
  • Materials Chemistry

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