Thermal-shock Resistance of SiC-C Functionally Gradient Material(FGM) Prepared by Chemical Vapor Deposition

Makoto Sasaki; Yucong Wang; Akira Ohkubo; Toshiyuki Hashida; Toshio Hirai; Hideaki Takahashi

doi:10.2497/jjspm.37.271

Thermal-shock Resistance of SiC-C Functionally Gradient Material(FGM) Prepared by Chemical Vapor Deposition

Makoto Sasaki, Yucong Wang, Akira Ohkubo, Toshiyuki Hashida, Toshio Hirai, Hideaki Takahashi

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Thermal stress calculated in SiC/C⋅FGM was considerably smaller than that of SiC monolith. The preparation of SiC/C⋅FGM, having the graded concentration predicted from the calculation, was tried by using CVD technique under the following conditions; a SiCl₄-CH₄-H₂ system, a deposition temperature of 1773K, total gas pressure of 1.3kPa. The film(thickness of 0.4mm) having a compositional gradient from C to SiC was obtained on a graphite substrate by changing the Si/C ratio in the gas phase during the deposition. Many small pores were observed in the range of 40~60 mol%C. SiC/C⋅FGM was not broken under cyclic high temperature heat flow conditions (heat flux=0. 7MW⋅m^-2), but SiC monolith was broken under the same conditions.

Original language	English
Pages (from-to)	271-274
Number of pages	4
Journal	journal of the japan society of powder and powder metallurgy
Volume	37
Issue number	2
DOIs	https://doi.org/10.2497/jjspm.37.271
Publication status	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Mechanical Engineering
Industrial and Manufacturing Engineering
Metals and Alloys
Materials Chemistry

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Thermal-shock Resistance of SiC-C Functionally Gradient Material(FGM) Prepared by Chemical Vapor Deposition. / Sasaki, Makoto; Wang, Yucong; Ohkubo, Akira; Hashida, Toshiyuki; Hirai, Toshio; Takahashi, Hideaki.

In: journal of the japan society of powder and powder metallurgy, Vol. 37, No. 2, 1990, p. 271-274.

Research output: Contribution to journal › Article › peer-review

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abstract = "Thermal stress calculated in SiC/C⋅FGM was considerably smaller than that of SiC monolith. The preparation of SiC/C⋅FGM, having the graded concentration predicted from the calculation, was tried by using CVD technique under the following conditions; a SiCl4-CH4-H2 system, a deposition temperature of 1773K, total gas pressure of 1.3kPa. The film(thickness of 0.4mm) having a compositional gradient from C to SiC was obtained on a graphite substrate by changing the Si/C ratio in the gas phase during the deposition. Many small pores were observed in the range of 40~60 mol%C. SiC/C⋅FGM was not broken under cyclic high temperature heat flow conditions (heat flux=0. 7MW⋅m-2), but SiC monolith was broken under the same conditions.",

author = "Makoto Sasaki and Yucong Wang and Akira Ohkubo and Toshiyuki Hashida and Toshio Hirai and Hideaki Takahashi",

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AU - Sasaki, Makoto

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AU - Ohkubo, Akira

AU - Hashida, Toshiyuki

AU - Hirai, Toshio

AU - Takahashi, Hideaki

PY - 1990

Y1 - 1990

N2 - Thermal stress calculated in SiC/C⋅FGM was considerably smaller than that of SiC monolith. The preparation of SiC/C⋅FGM, having the graded concentration predicted from the calculation, was tried by using CVD technique under the following conditions; a SiCl4-CH4-H2 system, a deposition temperature of 1773K, total gas pressure of 1.3kPa. The film(thickness of 0.4mm) having a compositional gradient from C to SiC was obtained on a graphite substrate by changing the Si/C ratio in the gas phase during the deposition. Many small pores were observed in the range of 40~60 mol%C. SiC/C⋅FGM was not broken under cyclic high temperature heat flow conditions (heat flux=0. 7MW⋅m-2), but SiC monolith was broken under the same conditions.

AB - Thermal stress calculated in SiC/C⋅FGM was considerably smaller than that of SiC monolith. The preparation of SiC/C⋅FGM, having the graded concentration predicted from the calculation, was tried by using CVD technique under the following conditions; a SiCl4-CH4-H2 system, a deposition temperature of 1773K, total gas pressure of 1.3kPa. The film(thickness of 0.4mm) having a compositional gradient from C to SiC was obtained on a graphite substrate by changing the Si/C ratio in the gas phase during the deposition. Many small pores were observed in the range of 40~60 mol%C. SiC/C⋅FGM was not broken under cyclic high temperature heat flow conditions (heat flux=0. 7MW⋅m-2), but SiC monolith was broken under the same conditions.

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Thermal-shock Resistance of SiC-C Functionally Gradient Material(FGM) Prepared by Chemical Vapor Deposition

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