Thermal robustness evaluation of nonvolatile memory using Pt nanogaps

Yasuhisa Naitoh, Hiroshi Suga, Takuya Abe, Kazuki Otsu, Yukiya Umeta, Touru Sumiya, Hisashi Shima, Kazuhito Tsukagoshi, Hiroyuki Akinaga

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We investigated the thermal robustness of a nonvolatile memory using polycrystalline platinum (Pt) nanogap electrodes. The temperature dependences of resistance states were evaluated from room temperature to 773 K. At high temperatures, the resistance of the high-resistance state (HRS) was slightly altered as the temperature changed. This slight alteration could be neglected, and the thermal robustness was improved by etching a SiO2 layer just under the nanogap. This indicated that the thermal alteration was caused by current leakage through the SiO2 layer. The nonvolatile memory employing Pt nanogaps is expected to be potentially useful as a thermally robust memory up to 773 K.

Original languageEnglish
Article number085202
JournalApplied Physics Express
Volume11
Issue number8
DOIs
Publication statusPublished - 2018 Aug
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Naitoh, Y., Suga, H., Abe, T., Otsu, K., Umeta, Y., Sumiya, T., Shima, H., Tsukagoshi, K., & Akinaga, H. (2018). Thermal robustness evaluation of nonvolatile memory using Pt nanogaps. Applied Physics Express, 11(8), [085202]. https://doi.org/10.7567/APEX.11.085202