THERMAL PROPERTIES OF AMORPHOUS Si3N4-C COMPOSITES PREPARED BY CHEMICAL VAPOR DEPOSITION.

Takashi Goto, Shinsuke Hayashi, Toshio Hirai

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The thermal diffusivity and thermal conductivity of amorphous CVD Si//3N//4 with high carbon content are lower than those of amorphous CVD Si//3N//4. The specific heat is independent of the carbon content. Structure is discussed in terms of the temperature dependence of thermal conductivity.

Original languageEnglish
Pages (from-to)176-183
Number of pages8
JournalScience Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry and Metallurgy
Volume29
Issue number2
Publication statusPublished - 1981 Jan 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Metals and Alloys

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