Abstract
The thermal diffusivity and thermal conductivity of amorphous CVD Si//3N//4 with high carbon content are lower than those of amorphous CVD Si//3N//4. The specific heat is independent of the carbon content. Structure is discussed in terms of the temperature dependence of thermal conductivity.
| Original language | English |
|---|---|
| Pages (from-to) | 176-183 |
| Number of pages | 8 |
| Journal | Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry and Metallurgy |
| Volume | 29 |
| Issue number | 2 |
| Publication status | Published - 1981 Jan 1 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Metals and Alloys