THERMAL PROPERTIES OF AMORPHOUS Si3N4-C COMPOSITES PREPARED BY CHEMICAL VAPOR DEPOSITION.

Takashi Goto; Shinsuke Hayashi; Toshio Hirai

THERMAL PROPERTIES OF AMORPHOUS Si₃N₄-C COMPOSITES PREPARED BY CHEMICAL VAPOR DEPOSITION.

Takashi Goto, Shinsuke Hayashi, Toshio Hirai

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The thermal diffusivity and thermal conductivity of amorphous CVD Si//3N//4 with high carbon content are lower than those of amorphous CVD Si//3N//4. The specific heat is independent of the carbon content. Structure is discussed in terms of the temperature dependence of thermal conductivity.

Original language	English
Pages (from-to)	176-183
Number of pages	8
Journal	Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry and Metallurgy
Volume	29
Issue number	2
Publication status	Published - 1981 Jan 1

ASJC Scopus subject areas

Condensed Matter Physics
Metals and Alloys

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@article{27eb0240d9db4eb38ab319ce4f729a2d,

title = "THERMAL PROPERTIES OF AMORPHOUS Si3N4-C COMPOSITES PREPARED BY CHEMICAL VAPOR DEPOSITION.",

abstract = "The thermal diffusivity and thermal conductivity of amorphous CVD Si//3N//4 with high carbon content are lower than those of amorphous CVD Si//3N//4. The specific heat is independent of the carbon content. Structure is discussed in terms of the temperature dependence of thermal conductivity.",

author = "Takashi Goto and Shinsuke Hayashi and Toshio Hirai",

year = "1981",

month = jan,

day = "1",

language = "English",

volume = "29",

pages = "176--183",

journal = "Science Reports of the Rerearch Institutes Tohoku University Series A-Physics",

issn = "0040-8808",

publisher = "Tohoku University",

number = "2",

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T1 - THERMAL PROPERTIES OF AMORPHOUS Si3N4-C COMPOSITES PREPARED BY CHEMICAL VAPOR DEPOSITION.

AU - Goto, Takashi

AU - Hayashi, Shinsuke

AU - Hirai, Toshio

PY - 1981/1/1

Y1 - 1981/1/1

N2 - The thermal diffusivity and thermal conductivity of amorphous CVD Si//3N//4 with high carbon content are lower than those of amorphous CVD Si//3N//4. The specific heat is independent of the carbon content. Structure is discussed in terms of the temperature dependence of thermal conductivity.

AB - The thermal diffusivity and thermal conductivity of amorphous CVD Si//3N//4 with high carbon content are lower than those of amorphous CVD Si//3N//4. The specific heat is independent of the carbon content. Structure is discussed in terms of the temperature dependence of thermal conductivity.

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M3 - Article

AN - SCOPUS:0019573767

VL - 29

SP - 176

EP - 183

JO - Science Reports of the Rerearch Institutes Tohoku University Series A-Physics

JF - Science Reports of the Rerearch Institutes Tohoku University Series A-Physics

SN - 0040-8808

IS - 2

ER -

THERMAL PROPERTIES OF AMORPHOUS Si3N4-C COMPOSITES PREPARED BY CHEMICAL VAPOR DEPOSITION.

Abstract

ASJC Scopus subject areas

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Cite this

THERMAL PROPERTIES OF AMORPHOUS Si₃N₄-C COMPOSITES PREPARED BY CHEMICAL VAPOR DEPOSITION.