Thermal oxidation of outdiffusing SiO with permeating O 2 in a SiO 2 film studied by angle-resolved X-ray photoelectron spectroscopy

Yuji Takakuwa, Mizuhisa Nihei, Nobuo Miyamoto

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)

Abstract

During annealing in vacuum and dry O 2 , the amount of suboxide, Θ s , in the 1000 Å SiO 2 films on Si(111) was measured as a function of the annealing time by angle-resolved X-ray photoelectron spectroscopy (ARXPS). From ARXPS spectra of Si 2p taken at two polar angles of 0° (bulk sensitive) and 75° (surface sensitive), it was clarified that during annealing in vacuum, Θ s increases with time underneath the surface more largely than on the surface, but annealing in O 2 atmosphere at 0.5 Torr reduces Θ s on the surface more significantly than underneath the surface. These indicate that SiO molecules outdiffusing from the SiO 2 /Si interface are oxidized by permeating O 2 in the SiO 2 films.

Original languageEnglish
Pages (from-to)141-146
Number of pages6
JournalApplied Surface Science
Volume117-118
DOIs
Publication statusPublished - 1997 Jun 2

Keywords

  • Angle resolved XPS
  • Si oxidation
  • SiO decomposition
  • SiO diffusion
  • Suboxide

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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