Thermal expansion coefficients of nano-clustering silica (NCS) films measured by X-ray reflectivity and substrate curvature methods

Takashi Suzuki, Iwao Sugiura, Shigeo Sato, Tomoji Nakamura

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Two methods are applied to measure the coefficient of thermal expansion (CTE) of nano-clustering silica (NCS) films. A direct measurement of the film thickness using X-ray reflectivity yields an intrinsic CTE of 12±2 ppm/°C. From the analysis of the stress-temperature profile obtained by a substrate curvature method, the CTE of the NCS films is estimated to be approximately 9.7 ppm/°C, which almost agrees with the result of the X-ray reflectivity measurement. The advantage of each of these methods for CTE measurement of thin films is discussed.

Original languageEnglish
Pages (from-to)L614-L616
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number5 A
DOIs
Publication statusPublished - 2004 May 1

Keywords

  • Cu interconnects
  • Iow-k dielectric
  • Nano-clusterlng silica
  • Substrate curvature method
  • Thermal expansion coefficient
  • X-ray reflectivity method

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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