Thermal equilibrium of Ge-related defects in a GeO2-SiO2 glass

Masahide Takahashi; Takumi Fujiwara; Taiji Kawachi; Akira J. Ikushima

doi:10.1063/1.121052

Thermal equilibrium of Ge-related defects in a GeO₂-SiO₂ glass

Masahide Takahashi, Takumi Fujiwara, Taiji Kawachi, Akira J. Ikushima

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

In a 15.7GeO₂ṡ84.3SiO₂ glass prepared by a vapor axial deposition method, optical absorptions at 4.92 and 5.08 eV were observed from 300 to 600 K. The results were then compared with electron spin resonance (ESR) measurement using the same samples. The absorption at 4.92 eV was found to increase with increasing temperature, while the optical absorption at 5.08 eV decreased with increasing temperature. These changes of optical absorption indicate that the concentration of neutral oxygen monovacancy is reduced at higher temperatures. The changes were quite reversible with the temperature. Concentration of GeE^′ center, estimated from ESR, increased with increasing temperature, which is in contrast with the decrease of neutral oxygen monovacancy. The present result strongly suggests the thermal equilibrium reaction between neutral oxygen monovacancy and GeE^′ center.

Original language	English
Pages (from-to)	1287-1289
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	11
DOIs	https://doi.org/10.1063/1.121052
Publication status	Published - 1998
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.121052

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title = "Thermal equilibrium of Ge-related defects in a GeO2-SiO2 glass",

abstract = "In a 15.7GeO2ṡ84.3SiO2 glass prepared by a vapor axial deposition method, optical absorptions at 4.92 and 5.08 eV were observed from 300 to 600 K. The results were then compared with electron spin resonance (ESR) measurement using the same samples. The absorption at 4.92 eV was found to increase with increasing temperature, while the optical absorption at 5.08 eV decreased with increasing temperature. These changes of optical absorption indicate that the concentration of neutral oxygen monovacancy is reduced at higher temperatures. The changes were quite reversible with the temperature. Concentration of GeE′ center, estimated from ESR, increased with increasing temperature, which is in contrast with the decrease of neutral oxygen monovacancy. The present result strongly suggests the thermal equilibrium reaction between neutral oxygen monovacancy and GeE′ center.",

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AU - Takahashi, Masahide

AU - Fujiwara, Takumi

AU - Kawachi, Taiji

AU - Ikushima, Akira J.

PY - 1998

Y1 - 1998

N2 - In a 15.7GeO2ṡ84.3SiO2 glass prepared by a vapor axial deposition method, optical absorptions at 4.92 and 5.08 eV were observed from 300 to 600 K. The results were then compared with electron spin resonance (ESR) measurement using the same samples. The absorption at 4.92 eV was found to increase with increasing temperature, while the optical absorption at 5.08 eV decreased with increasing temperature. These changes of optical absorption indicate that the concentration of neutral oxygen monovacancy is reduced at higher temperatures. The changes were quite reversible with the temperature. Concentration of GeE′ center, estimated from ESR, increased with increasing temperature, which is in contrast with the decrease of neutral oxygen monovacancy. The present result strongly suggests the thermal equilibrium reaction between neutral oxygen monovacancy and GeE′ center.

AB - In a 15.7GeO2ṡ84.3SiO2 glass prepared by a vapor axial deposition method, optical absorptions at 4.92 and 5.08 eV were observed from 300 to 600 K. The results were then compared with electron spin resonance (ESR) measurement using the same samples. The absorption at 4.92 eV was found to increase with increasing temperature, while the optical absorption at 5.08 eV decreased with increasing temperature. These changes of optical absorption indicate that the concentration of neutral oxygen monovacancy is reduced at higher temperatures. The changes were quite reversible with the temperature. Concentration of GeE′ center, estimated from ESR, increased with increasing temperature, which is in contrast with the decrease of neutral oxygen monovacancy. The present result strongly suggests the thermal equilibrium reaction between neutral oxygen monovacancy and GeE′ center.

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Thermal equilibrium of Ge-related defects in a GeO₂-SiO₂ glass

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