Thermal equilibrium of Ge-related defects in a GeO2-SiO2 glass

Masahide Takahashi, Takumi Fujiwara, Taiji Kawachi, Akira J. Ikushima

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13 Citations (Scopus)


In a 15.7GeO2ṡ84.3SiO2 glass prepared by a vapor axial deposition method, optical absorptions at 4.92 and 5.08 eV were observed from 300 to 600 K. The results were then compared with electron spin resonance (ESR) measurement using the same samples. The absorption at 4.92 eV was found to increase with increasing temperature, while the optical absorption at 5.08 eV decreased with increasing temperature. These changes of optical absorption indicate that the concentration of neutral oxygen monovacancy is reduced at higher temperatures. The changes were quite reversible with the temperature. Concentration of GeE center, estimated from ESR, increased with increasing temperature, which is in contrast with the decrease of neutral oxygen monovacancy. The present result strongly suggests the thermal equilibrium reaction between neutral oxygen monovacancy and GeE center.

Original languageEnglish
Pages (from-to)1287-1289
Number of pages3
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 1998
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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