Thermal diffusivities and conductivities of molten germanium and silicon

Tsuyoshi Nishi, Hiroyuki Shibata, Hiromichi Ohta

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Thermal diffusivity values of molten germanium and silicon were measured by a laser flash method. Simple but useful sample cell systems were developed to keep the molten germanium and silicon shape uniform for a given thickness. In the present experimental condition, it is necessary to consider the effect of not only the radiative heat loss but also the conductive heat loss at the interface between the molten sample and the cell material under the present experimental conditions. However, the computer simulation results suggest that the conductive heat loss is found to be negligibly small. The thermal diffusivity values of molten germanium and silicon are given in the following equations (unit: m2/s). αGe = 1.40 × 10-8 (T - 1218) + 2.29 × 10-5 1218 ≤ T ≤ 1398 (unit: K) αSi = 4.48 × 10-9 (T - 1685) + 2.23 × 10-5 1685 ≤ T ≤ 1705 (unit: K).

Original languageEnglish
Pages (from-to)2369-2374
Number of pages6
JournalMaterials Transactions
Volume44
Issue number11
DOIs
Publication statusPublished - 2003 Nov

Keywords

  • High temperature
  • Laser flash method
  • Molten germanium
  • Molten silicon
  • Sample cell
  • Thermal conductivity
  • Thermal diffusivity

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Thermal diffusivities and conductivities of molten germanium and silicon'. Together they form a unique fingerprint.

  • Cite this