Thermal-dependent electronic structure at the interface of C60-adsorbed Si(111)-(7 × 7) surface

Kazuyuki Sakamoto, Daiyu Kondo, Yoshimitsu Ushimi, Akio Kimura, Akito Kakizaki, Shozo Suto

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

We report here the temperature-dependent measurements of the valence spectra, and the C 1s and the Si 2p core-level spectra of the C60 adsorbed Si(111)-(7 × 7) surface, using photoelectron spectroscopy. At 300 K the valence spectra show the physisorption of most C60 molecules for a one monolayer C60 film. After annealing the sample at 1120 K the molecular orbitals disappear due to the breakdown of the C60 cage. The C 1s and Si 2p core-level spectra obtained at the same temperature indicate the progress of SiC formation at the interface between C60 and the Si(111) surface. After annealing at 1170 K, the formation of SiC islands is confirmed by the binding energies of the peaks observed in the valence and C 1s core-level spectra.

Original languageEnglish
Pages (from-to)248-253
Number of pages6
JournalSurface Science
Volume438
Issue number1-3
DOIs
Publication statusPublished - 1999 Sep 10
EventProceedings of the 1998 International Symposium on Surface and Interface: Properties of Different Symmetry Crossing 98 (ISSI PDSC-98) - Tokyo, Jpn
Duration: 1998 Nov 191998 Nov 21

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Sakamoto, K., Kondo, D., Ushimi, Y., Kimura, A., Kakizaki, A., & Suto, S. (1999). Thermal-dependent electronic structure at the interface of C60-adsorbed Si(111)-(7 × 7) surface. Surface Science, 438(1-3), 248-253. https://doi.org/10.1016/S0039-6028(99)00577-4