Formation of both p- and n-type thermally converted surface layers in semi-insulating GaAs is explained in terms of outdiffusion of impurities. Carrier concentrations and impurity profiles calculated on the basis of this outdiffusion model are in close agreement with the experimental values which were obtained by Hall measurements on a variety of heat-treated samples. This excellent agreement is further backed by the mass-spectrometric data and gives strong evidence to the adequacy of the model.
ASJC Scopus subject areas
- Physics and Astronomy(all)