Thermal conversion mechanism in semi-insulating GaAs

Hideo Ohno, Akio Ushirokawa, Takashi Katoda

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Formation of both p- and n-type thermally converted surface layers in semi-insulating GaAs is explained in terms of outdiffusion of impurities. Carrier concentrations and impurity profiles calculated on the basis of this outdiffusion model are in close agreement with the experimental values which were obtained by Hall measurements on a variety of heat-treated samples. This excellent agreement is further backed by the mass-spectrometric data and gives strong evidence to the adequacy of the model.

Original languageEnglish
Pages (from-to)8226-8228
Number of pages3
JournalJournal of Applied Physics
Volume50
Issue number12
DOIs
Publication statusPublished - 1979
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Thermal conversion mechanism in semi-insulating GaAs'. Together they form a unique fingerprint.

Cite this