Thermal conductivity of 10 nm-diameter silicon nanowires array fabricated by bio-template and neutral beam etching

Akiou Kikuchi, Akifumi Yao, Isamu Mori, Ichiro Yamashita, Takahito Ono, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper, we present the fabrication and thermal conductivity measurements of a 10 nm-diameter Si nanowires (SiNWs) array for thermoelectric (TE) devices applications. The SiNWs were fabricated by bio-template and neutral beam etching techniques. Then, the SiNWs were embedded into spin-on-glass (SOG) for the measurement of the thermal conductivity. The measured thermal conductivities of the SiNWs with lengths of 50 nm and 100 nm were 2.1 ± 0.6 W/mK and 9.5 ± 1.4 W/mK, respectively.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages505-507
Number of pages3
ISBN (Electronic)9781509039142
DOIs
Publication statusPublished - 2016 Nov 21
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 2016 Aug 222016 Aug 25

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period16/8/2216/8/25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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    Kikuchi, A., Yao, A., Mori, I., Yamashita, I., Ono, T., & Samukawa, S. (2016). Thermal conductivity of 10 nm-diameter silicon nanowires array fabricated by bio-template and neutral beam etching. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 505-507). [7751300] (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751300