Thermal change of unstable stacking faults in β-SiC

Naoto Shirahata, Kazunori Kijima, Xiuliang Ma, Yuichi Ikuhara

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)


    The thermal change of unstable stacking faults (USFs) in ultrafine and highly pure β-SiC powder synthesized by the plasma chemical vapor deposition (plasma-CVD) method was studied by high-resolution transmission electron microscopy (HR-TEM). The number of USFs, which were frequently observed in as-synthesized powder, decreased at elevated temperatures in an Ar atmosphere. In contrast, the number of general stacking faults (GSFs) increased with decreasing number of USFs. Moreover, a type of stacking fault that was geometrically more unstable than USF was observed in the specimen after heat treatment. In the present study, the annihilation process of USFs observed in the specimen before heat treatment is discussed.

    Original languageEnglish
    Pages (from-to)3969-3974
    Number of pages6
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Issue number6 A
    Publication statusPublished - 2001 Jun 1


    • General stacking fault
    • Heat treatment
    • High-resolution transmission electron microscopy
    • Plasma-CVD
    • Unstable stacking fault
    • β-SiC

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)


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