Thermal and electrical properties of Czochralski grown GeSi single crystals

Ichiro Yonenaga, T. Akashi, Takashi Goto

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The thermoelectric parameters, thermal conductivity, electrical conductivity and Seebeck coefficient of high quality single crystals of Ge1-xSix alloys in various composition of 0.8 < x < 1, were investigated in the temperature range 300-1000 K for application to a high performance thermoelectric device. Single crystals of the alloys of heavily impurity-doped were grown by the Czochralski technique. The thermal conductivity was mainly controlled by phonon scattering, showing a minimum at x = 0.5-0.6. The electrical conductivity of alloys was well controlled to be almost constant with a high magnitude by the suitable doping level. The Seebeck coefficient was 300-400 μV/K at 600°C in the impurity-doped GeSi alloys. The dependence of the Seebeck coefficient on the electrical conductivity was revealed. The dimensionless figure of merit of 0.65 was evaluated in the impurity-doped single crystals of GeSi alloys.

Original languageEnglish
Pages (from-to)1313-1317
Number of pages5
JournalJournal of Physics and Chemistry of Solids
Volume62
Issue number7
DOIs
Publication statusPublished - 2001 Jul 1

Keywords

  • A. Semiconductors
  • D. Electrical conductivity
  • D. Electrical properties
  • D. Thermal conductivity

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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