Thermal and electrical properties of Czochralski grown GeSi alloys

I. Yonenaga, T. Goto, J. Li, M. Nonaka

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

The thermoelectric parameters, the thermal conductivity, electrical conductivity and Seebeck coefficient were evaluated on high purity crystals of Ge1-xSix alloys in the whole composition 0<x<1 at elevated temperatures up to 800 °C. The thermal resistivity showed a maximum at x≈0.5 due to the phonon scattering. The electrical conductivity decreased with increasing x, relating to the intrinsic carrier concentration determined by the band gap energy at high temperatures. The Seebeck coefficient was extremely low in the composition 0.1<x<0.5 due to the small difference of the electron and hole mobilities. The large magnitude of the Seebeck coefficient was obtained in the GeSi with x≈0.8 at elevated temperatures.

Original languageEnglish
Pages402-405
Number of pages4
Publication statusPublished - 1998 Dec 1
EventProceedings of the 1998 17th International Conference on Thermoelectrics, ICT - Nagoya, Jpn
Duration: 1998 May 241998 May 28

Other

OtherProceedings of the 1998 17th International Conference on Thermoelectrics, ICT
CityNagoya, Jpn
Period98/5/2498/5/28

ASJC Scopus subject areas

  • Engineering(all)

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    Yonenaga, I., Goto, T., Li, J., & Nonaka, M. (1998). Thermal and electrical properties of Czochralski grown GeSi alloys. 402-405. Paper presented at Proceedings of the 1998 17th International Conference on Thermoelectrics, ICT, Nagoya, Jpn, .