Theory of workfunction control of silicides by doping for future Si-Nano-devices based on fundamental physics of why silicides exist in nature

T. Nakayama, K. Kakushima, O. Nakatsuka, Y. Machida, S. Sotome, T. Matsuki, K. Ohmori, H. Iwai, S. Zaima, T. Chikyow, K. Shiraishi, K. Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have revealed by the first-principles calculations that the workfunction of silicide is controlled by the high-density dopant existing in the silicide itself, and the selective doping into Si or Ni site is essential to realize such control. In addition, we showed that these doping properties are closely related to fundamental physics of silicides; why NixSiy exists and why AuxSiy not exists in nature. These findings might give a new guideline to design silicide-electrode contacts for future 10nm nano-devices.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages15.5.1-15.5.4
DOIs
Publication statusPublished - 2010
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 2010 Dec 62010 Dec 8

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period10/12/610/12/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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