Theory of fermi level pinning of high-k dielectrics

Kenji Shiraishi, Yasushi Akasaka, Naoto Umezawa, Yasuo Nara, Keisaku Yamada, Hideki Takeuchi, Heiji Watanabe, Toyohiro Chikyow, Tsu Jae King Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Fermi-level pinning of poly-Si and metal-silicide gate materials on Hf-based gate dielectrics has been systematically studied theoretically. Fermi-level pinning in high-work-function materials is governed by the O vacancy generation and subsequent formation of interface dipoles near gate electrodes due to the electron transfer. On the other hand, O interstitial formation plays a crucial role for Fermi-level pinning in low-work-function materials. From our theoretical considerations, we have found that the work-function pinning-free-region generally appears due the difference in the mechanism of Fermi-level pinning of high- and low-work-function materials. The widening of this work-function pinning-free-region is the key issue for the fundamental relaxation of Fermi-level pinning in high-k gate dielectric.

Original languageEnglish
Title of host publication2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages306-313
Number of pages8
ISBN (Print)1424404045, 9781424404049
DOIs
Publication statusPublished - 2006 Jan 1
Externally publishedYes
Event2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 - Monterey, CA, United States
Duration: 2006 Sep 62006 Sep 8

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06
CountryUnited States
CityMonterey, CA
Period06/9/606/9/8

Keywords

  • Component
  • Fermi-level pinning
  • Flatband voltage shift
  • High-k dielectrics
  • Interface dipoles
  • Metal silicide gates
  • O interstitial
  • O vacancy
  • Poly-Si gates
  • Theory

ASJC Scopus subject areas

  • Engineering(all)

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