We investigated spin dependent transport properties of magnetic tunnel junctions (MTJs) with D022-Mn3 Ga or Mn3 Ge using the first-principles electronic and ballistic-transport calculations. We found that tunneling magntoresistance (TMR) ratios of Mn3 Ga/MgO(1 nm)/Mn3 Ga(001) MTJs depend strongly on the interfacial structures, which are about 600% for MnMn termination and 40% for MnGa termination. The relatively small TMR ratio of MnGa termination can be attributed to a presence of the Δ1 state around the Fermi level in both spin channels. On the other hand, we obtained over 4000% TMR ratios both for MnMn and MnGe terminations of Mn3 Ge-based MTJs due to the half-metallic electronic structure on the Δ1 state. We concluded that D0 22-Mn3 Ge is a promising material providing large TMR effects as well as strong perpendicular magnetic anisotropy.
- Metal-insulator interface
- Numerical simulation
- Spin polarized transport
- Tunneling magnetoresistance (TMR)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering