Theoretical study on tunneling magnetoresistance of magnetic tunnel tunctions with D022-Mn3Z (Z = Ga, Ge)

Yoshio Miura, Masafumi Shirai

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


We investigated spin dependent transport properties of magnetic tunnel junctions (MTJs) with D022-Mn3 Ga or Mn3 Ge using the first-principles electronic and ballistic-transport calculations. We found that tunneling magntoresistance (TMR) ratios of Mn3 Ga/MgO(1 nm)/Mn3 Ga(001) MTJs depend strongly on the interfacial structures, which are about 600% for MnMn termination and 40% for MnGa termination. The relatively small TMR ratio of MnGa termination can be attributed to a presence of the Δ1 state around the Fermi level in both spin channels. On the other hand, we obtained over 4000% TMR ratios both for MnMn and MnGe terminations of Mn3 Ge-based MTJs due to the half-metallic electronic structure on the Δ1 state. We concluded that D0 22-Mn3 Ge is a promising material providing large TMR effects as well as strong perpendicular magnetic anisotropy.

Original languageEnglish
Article number2276625
JournalIEEE Transactions on Magnetics
Issue number1
Publication statusPublished - 2014 Jan


  • Metal-insulator interface
  • Numerical simulation
  • Spin polarized transport
  • Tunneling magnetoresistance (TMR)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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