Theoretical study of excess Si emitted from Si-oxide/Si interfaces

Hiroyuki Kageshima; Masahi Uematsu; Kazuto Akagi; Shinji Tsuneyuki; Toru Akiyama; Kenji Shiraishi

doi:10.1143/JJAP.43.8223

Theoretical study of excess Si emitted from Si-oxide/Si interfaces

Hiroyuki Kageshima, Masahi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, Kenji Shiraishi

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The excess Si emitted from the Si-oxide/Si interface is studied using the first-principles calculations. It is shown that the excess Si can have many (meta-) stable positions around the interface. In addition, some positions in the oxide do not have any dangling bonds or floating bonds in contrast to those in the bulk crystalline Si. The results indicate that the emitted Si can be located in the oxide layer but they do not necessarily cause charge traps in the oxide. The emitted Si atoms are thought to just be oxidized and absorbed into the oxide while a portion of them cause the E′ centers, the P _b centers or charge traps.

Original language	English
Pages (from-to)	8223-8226
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.43.8223
Publication status	Published - 2004 Dec
Externally published	Yes

Keywords

Defects
First-principles calculation
Interface
Interstitiels
Oxidation
Si
Si oxide

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.43.8223

Cite this

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AU - Kageshima, Hiroyuki

AU - Uematsu, Masahi

AU - Akagi, Kazuto

AU - Tsuneyuki, Shinji

AU - Akiyama, Toru

AU - Shiraishi, Kenji

PY - 2004/12

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AB - The excess Si emitted from the Si-oxide/Si interface is studied using the first-principles calculations. It is shown that the excess Si can have many (meta-) stable positions around the interface. In addition, some positions in the oxide do not have any dangling bonds or floating bonds in contrast to those in the bulk crystalline Si. The results indicate that the emitted Si can be located in the oxide layer but they do not necessarily cause charge traps in the oxide. The emitted Si atoms are thought to just be oxidized and absorbed into the oxide while a portion of them cause the E′ centers, the P b centers or charge traps.

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KW - First-principles calculation

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KW - Interstitiels

KW - Oxidation

KW - Si

KW - Si oxide

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Theoretical study of excess Si emitted from Si-oxide/Si interfaces

Abstract

Keywords

ASJC Scopus subject areas

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