Abstract
The excess Si emitted from the Si-oxide/Si interface is studied using the first-principles calculations. It is shown that the excess Si can have many (meta-) stable positions around the interface. In addition, some positions in the oxide do not have any dangling bonds or floating bonds in contrast to those in the bulk crystalline Si. The results indicate that the emitted Si can be located in the oxide layer but they do not necessarily cause charge traps in the oxide. The emitted Si atoms are thought to just be oxidized and absorbed into the oxide while a portion of them cause the E′ centers, the P b centers or charge traps.
| Original language | English |
|---|---|
| Pages (from-to) | 8223-8226 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 43 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2004 Dec 1 |
| Externally published | Yes |
Keywords
- Defects
- First-principles calculation
- Interface
- Interstitiels
- Oxidation
- Si
- Si oxide
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Cite this
Kageshima, H., Uematsu, M., Akagi, K., Tsuneyuki, S., Akiyama, T., & Shiraishi, K. (2004). Theoretical study of excess Si emitted from Si-oxide/Si interfaces. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 43(12), 8223-8226. https://doi.org/10.1143/JJAP.43.8223