Theoretical studies on fermi level pining of Hf-based high-k gate stacks based on thermodynamics

K. Shiraishi, Y. Akasaka, G. Nakamura, M. Kadoshima, H. Watanabe, A. Ohta, S. Miyazaki, K. Ohmori, T. Chikyow, K. Yamabe, Y. Nara, Y. Ohji, K. Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have studied Fermi level pinning of Hf-based high-k gate stacks based on thermodynamics by our O vacancy model. Our study shows that FLP cannot be avoided when the system is under thermal equilibrium O injection to aim O vacancy elimination is hopeless, since O vacancy elimination condition is equivalent to the Si substrate oxidation which leads to the increase in EOT. We also studied the mechanism of FLP induced by H2 anneal FLP by H 2 anneal is governed by the O vacancy annihilation reaction by reducing SiO2 interface layer. Moreover, we briefly discuss the recipe for obtaining band-edge-work-function metals

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages125-133
Number of pages9
Edition4
DOIs
Publication statusPublished - 2007 Dec 1
Event5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 82007 Oct 10

Publication series

NameECS Transactions
Number4
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period07/10/807/10/10

ASJC Scopus subject areas

  • Engineering(all)

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    Shiraishi, K., Akasaka, Y., Nakamura, G., Kadoshima, M., Watanabe, H., Ohta, A., Miyazaki, S., Ohmori, K., Chikyow, T., Yamabe, K., Nara, Y., Ohji, Y., & Yamada, K. (2007). Theoretical studies on fermi level pining of Hf-based high-k gate stacks based on thermodynamics. In ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks (4 ed., pp. 125-133). (ECS Transactions; Vol. 11, No. 4). https://doi.org/10.1149/1.2779554