Theoretical studies on fermi level pining of Hf-based high-k gate stacks based on thermodynamics

K. Shiraishi; Y. Akasaka; G. Nakamura; M. Kadoshima; H. Watanabe; A. Ohta; S. Miyazaki; K. Ohmori; T. Chikyow; K. Yamabe; Y. Nara; Y. Ohji; K. Yamada

doi:10.1149/1.2779554

Theoretical studies on fermi level pining of Hf-based high-k gate stacks based on thermodynamics

K. Shiraishi, Y. Akasaka, G. Nakamura, M. Kadoshima, H. Watanabe, A. Ohta, S. Miyazaki, K. Ohmori, T. Chikyow, K. Yamabe, Y. Nara, Y. Ohji, K. Yamada

Advanced Institute for Materials Research (AIMR)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We have studied Fermi level pinning of Hf-based high-k gate stacks based on thermodynamics by our O vacancy model. Our study shows that FLP cannot be avoided when the system is under thermal equilibrium O injection to aim O vacancy elimination is hopeless, since O vacancy elimination condition is equivalent to the Si substrate oxidation which leads to the increase in EOT. We also studied the mechanism of FLP induced by H₂ anneal FLP by H ₂ anneal is governed by the O vacancy annihilation reaction by reducing SiO₂ interface layer. Moreover, we briefly discuss the recipe for obtaining band-edge-work-function metals

Original language	English
Title of host publication	ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages	125-133
Number of pages	9
Edition	4
DOIs	https://doi.org/10.1149/1.2779554
Publication status	Published - 2007 Dec 1
Event	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States Duration: 2007 Oct 8 → 2007 Oct 10

Publication series

Name	ECS Transactions
Number	4
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
Country/Territory	United States
City	Washington, DC
Period	07/10/8 → 07/10/10

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.2779554

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Shiraishi, K., Akasaka, Y., Nakamura, G., Kadoshima, M., Watanabe, H., Ohta, A., Miyazaki, S., Ohmori, K., Chikyow, T., Yamabe, K., Nara, Y., Ohji, Y., & Yamada, K. (2007). Theoretical studies on fermi level pining of Hf-based high-k gate stacks based on thermodynamics. In ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks (4 ed., pp. 125-133). (ECS Transactions; Vol. 11, No. 4). https://doi.org/10.1149/1.2779554

Theoretical studies on fermi level pining of Hf-based high-k gate stacks based on thermodynamics. / Shiraishi, K.; Akasaka, Y.; Nakamura, G.; Kadoshima, M.; Watanabe, H.; Ohta, A.; Miyazaki, S.; Ohmori, K.; Chikyow, T.; Yamabe, K.; Nara, Y.; Ohji, Y.; Yamada, K.

ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4. ed. 2007. p. 125-133 (ECS Transactions; Vol. 11, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shiraishi, K, Akasaka, Y, Nakamura, G, Kadoshima, M, Watanabe, H, Ohta, A, Miyazaki, S, Ohmori, K, Chikyow, T, Yamabe, K, Nara, Y, Ohji, Y & Yamada, K 2007, Theoretical studies on fermi level pining of Hf-based high-k gate stacks based on thermodynamics. in ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4 edn, ECS Transactions, no. 4, vol. 11, pp. 125-133, 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting, Washington, DC, United States, 07/10/8. https://doi.org/10.1149/1.2779554

Shiraishi, K. ; Akasaka, Y. ; Nakamura, G. ; Kadoshima, M. ; Watanabe, H. ; Ohta, A. ; Miyazaki, S. ; Ohmori, K. ; Chikyow, T. ; Yamabe, K. ; Nara, Y. ; Ohji, Y. ; Yamada, K. / Theoretical studies on fermi level pining of Hf-based high-k gate stacks based on thermodynamics. ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4. ed. 2007. pp. 125-133 (ECS Transactions; 4).

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abstract = "We have studied Fermi level pinning of Hf-based high-k gate stacks based on thermodynamics by our O vacancy model. Our study shows that FLP cannot be avoided when the system is under thermal equilibrium O injection to aim O vacancy elimination is hopeless, since O vacancy elimination condition is equivalent to the Si substrate oxidation which leads to the increase in EOT. We also studied the mechanism of FLP induced by H2 anneal FLP by H 2 anneal is governed by the O vacancy annihilation reaction by reducing SiO2 interface layer. Moreover, we briefly discuss the recipe for obtaining band-edge-work-function metals",

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AU - Watanabe, H.

AU - Ohta, A.

AU - Miyazaki, S.

AU - Ohmori, K.

AU - Chikyow, T.

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AB - We have studied Fermi level pinning of Hf-based high-k gate stacks based on thermodynamics by our O vacancy model. Our study shows that FLP cannot be avoided when the system is under thermal equilibrium O injection to aim O vacancy elimination is hopeless, since O vacancy elimination condition is equivalent to the Si substrate oxidation which leads to the increase in EOT. We also studied the mechanism of FLP induced by H2 anneal FLP by H 2 anneal is governed by the O vacancy annihilation reaction by reducing SiO2 interface layer. Moreover, we briefly discuss the recipe for obtaining band-edge-work-function metals

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Theoretical studies on fermi level pining of Hf-based high-k gate stacks based on thermodynamics

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