Theoretical investigations on anisotropic optical properties in semipolar and nonpolar InGaN quantum wells

Kazunobu Kojima, Hiroaki Kamon, Mitsuru Funato, Yoichi Kawakami

Research output: Contribution to journalConference article

39 Citations (Scopus)

Abstract

The anisotropic band structures and spontaneous emission of the non c plane InGaN/GaN quantum wells (QWs) were computed based on the k·p perturbation theory. Spontaneous emission due to the A valence band is strongly polarized perpendicular to the c axis, while that from the B band has 90°-rotated polarization, for the crystal angle θ larger than 50°. However, it was found that excited carriers can distribute into both the A and B bands, so that the effective polarization Peff defined by the integrated luminescence intensity is much reduced even for nonpolar InGaN/GaN QWs. Thus, Peff was systematically studied for arbitrary planes. We found that the energy separation between the A and B bands becomes significant and carrier population of the B valence band is suppressed as the In content increases, when Peff approaches unity.

Original languageEnglish
Pages (from-to)3038-3041
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number9
DOIs
Publication statusPublished - 2008 Dec 1
Externally publishedYes
Event34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan
Duration: 2007 Oct 152007 Oct 18

ASJC Scopus subject areas

  • Condensed Matter Physics

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