Abstract
The anisotropic band structures and spontaneous emission of the non c plane InGaN/GaN quantum wells (QWs) were computed based on the k·p perturbation theory. Spontaneous emission due to the A valence band is strongly polarized perpendicular to the c axis, while that from the B band has 90°-rotated polarization, for the crystal angle θ larger than 50°. However, it was found that excited carriers can distribute into both the A and B bands, so that the effective polarization Peff defined by the integrated luminescence intensity is much reduced even for nonpolar InGaN/GaN QWs. Thus, Peff was systematically studied for arbitrary planes. We found that the energy separation between the A and B bands becomes significant and carrier population of the B valence band is suppressed as the In content increases, when Peff approaches unity.
Original language | English |
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Pages (from-to) | 3038-3041 |
Number of pages | 4 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 5 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2008 Dec 1 |
Externally published | Yes |
Event | 34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan Duration: 2007 Oct 15 → 2007 Oct 18 |
ASJC Scopus subject areas
- Condensed Matter Physics