Theoretical insights into the minority carrier lifetime of doped Si - A computational study

K. Iyakutti, R. Lavanya, R. Rajeswarapalanichamy, E. Mathan Kumar, Y. Kawazoe

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Using density functional theory, we have analyzed the ways and means of improving the minority carrier lifetime (MCL) by calculating the band structure dependent quantities contributing to the MCL. We have computationally modeled silicon doped with different elements like B, C, N, O, P, Ti, Fe, Ga, Ge, As, In, Sn, Sb, and Pt and looked at the effect of doping on MCL. In co-doping, the systems Si-B-Ga, Si-B-Ge, Si-B-2Ge, Si-B-Pt, Si-Ga-Ge, Si-Ga-2Ge, and Si-Ga-Pt are investigated. From our calculation, it is found that by doping and co-doping of Si with suitable elements having "s" and "p" electrons, there is a decrease in the recombination activity. The predicted effective minority carrier lifetime indicates the possibility of significant improvements. Based on the above studies, it is now maybe possible, with suitable choice of dopant and co-dopant material, to arrive at part of a standard production process for solar grade Si material.

Original languageEnglish
Article number161420
JournalJournal of Applied Physics
Volume123
Issue number16
DOIs
Publication statusPublished - 2018 Apr 28

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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