Theoretical estimation of the effect of minor elements on the solubility of oxygen in silicon melt

Y. Waseda, K. T. Jacob, Y. Iguchi, T. Narushima

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effect of fourteen minor elements (Al, As, B, Bi, C, Ga, Ge, In, N, P, Pb, S, Sb and Sn) on the solubility of oxygen in silicon melt has been estimated using a recently developed theoretical equation, with only fundamental physical parameters such as hard sphere diameter, atomic volume and molar heat of solution at infinite dilution as inputs. The results are expressed in the form of interaction parameters. Although only limited experimental data are available for comparison, the theoretical approach appears to predict the correct sign, but underestimates the magnitude of the interaction between oxygen and alloying elements. The present theoretical approach is useful in making qualitative predications on the effect of minor elements on the solubility of oxygen in silicon melt, when direct measurements are not available.

Original languageEnglish
Pages (from-to)357-362
Number of pages6
JournalJournal of Crystal Growth
Volume139
Issue number3-4
DOIs
Publication statusPublished - 1994 May 2

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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