Theoretical design of desirable stack structure for resistive random access memories

K. Kamiya, M. Y. Yang, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We show the electronic roles in vacancy-filamentary-type switching of binary oxide-based resistive random access memories using ab initio modeling. We show that charge injection and removal determine the thermodynamic stability of the filament and the diffusion in the devices. The vacancy cohesion-isolation phase transition upon charge injection and removal is thus one of the main factors that govern resistive switching. Based on the physics, we propose desirable three-layer stack structures for further improvement of the memory characteristics, where spatial differences in the oxygen chemical potential in the device cell lead to an asymmetrical vacancy filament shape that can be used to improve the memory characteristics, such as ON/OFF ratio.

Original languageEnglish
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages181-188
Number of pages8
Edition7
ISBN (Electronic)9781607684527
DOIs
Publication statusPublished - 2013

Publication series

NameECS Transactions
Number7
Volume58
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • Engineering(all)

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