Theoretical analysis of vacancy transport combined with electromigration and stress induced voiding

Takenao Nemoto, Toshimitsu Yokobori, Tsutomu Murakawa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Electromigration (EM) and stress-induced voiding have become significant in recent LSI interconnections due to the increase in current density and residual stress [1-3]. Many works have been carried out to clarify the relationship between EM and residual stress [4-6]. The present authors have reported the numerical analysis of vacancy transport based upon the mass balance equation [7]. This paper concludes that the behavior of vacancy transport by EM is influenced by residual stress. In this paper, an equation for vacancy transport is proposed to include the effect of residual stress. A computer-aided simulation and an in-situ observation test are conducted to discuss the quantitative relationship between current density and residual stress. [Keywords:.

    Original languageEnglish
    Title of host publication2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual
    Pages634-635
    Number of pages2
    DOIs
    Publication statusPublished - 2007 Sep 25
    Event45th Annual IEEE International Reliability Physics Symposium 2007, IRPS - Phoenix, AZ, United States
    Duration: 2007 Apr 152007 Apr 19

    Publication series

    NameAnnual Proceedings - Reliability Physics (Symposium)
    ISSN (Print)0099-9512

    Other

    Other45th Annual IEEE International Reliability Physics Symposium 2007, IRPS
    CountryUnited States
    CityPhoenix, AZ
    Period07/4/1507/4/19

    Keywords

    • Electromigration
    • In-situ observation
    • Numerical analysis
    • Residual stress

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Safety, Risk, Reliability and Quality

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