Theoretical analysis of vacancy transport combined with electromigration and stress induced voiding

Takenao Nemoto; Toshimitsu Yokobori; Tsutomu Murakawa

doi:10.1109/RELPHY.2007.369987

Theoretical analysis of vacancy transport combined with electromigration and stress induced voiding

Takenao Nemoto, Toshimitsu Yokobori, Tsutomu Murakawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Electromigration (EM) and stress-induced voiding have become significant in recent LSI interconnections due to the increase in current density and residual stress [1-3]. Many works have been carried out to clarify the relationship between EM and residual stress [4-6]. The present authors have reported the numerical analysis of vacancy transport based upon the mass balance equation [7]. This paper concludes that the behavior of vacancy transport by EM is influenced by residual stress. In this paper, an equation for vacancy transport is proposed to include the effect of residual stress. A computer-aided simulation and an in-situ observation test are conducted to discuss the quantitative relationship between current density and residual stress. [Keywords:.

Original language	English
Title of host publication	2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual
Pages	634-635
Number of pages	2
DOIs	https://doi.org/10.1109/RELPHY.2007.369987
Publication status	Published - 2007 Sep 25
Event	45th Annual IEEE International Reliability Physics Symposium 2007, IRPS - Phoenix, AZ, United States Duration: 2007 Apr 15 → 2007 Apr 19

Publication series

Name	Annual Proceedings - Reliability Physics (Symposium)
ISSN (Print)	0099-9512

Other

Other	45th Annual IEEE International Reliability Physics Symposium 2007, IRPS
Country/Territory	United States
City	Phoenix, AZ
Period	07/4/15 → 07/4/19

Keywords

Electromigration
In-situ observation
Numerical analysis
Residual stress

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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10.1109/RELPHY.2007.369987

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Theoretical analysis of vacancy transport combined with electromigration and stress induced voiding. / Nemoto, Takenao; Yokobori, Toshimitsu; Murakawa, Tsutomu.

2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual. 2007. p. 634-635 4227728 (Annual Proceedings - Reliability Physics (Symposium)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nemoto, T, Yokobori, T & Murakawa, T 2007, Theoretical analysis of vacancy transport combined with electromigration and stress induced voiding. in 2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual., 4227728, Annual Proceedings - Reliability Physics (Symposium), pp. 634-635, 45th Annual IEEE International Reliability Physics Symposium 2007, IRPS, Phoenix, AZ, United States, 07/4/15. https://doi.org/10.1109/RELPHY.2007.369987

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title = "Theoretical analysis of vacancy transport combined with electromigration and stress induced voiding",

abstract = "Electromigration (EM) and stress-induced voiding have become significant in recent LSI interconnections due to the increase in current density and residual stress [1-3]. Many works have been carried out to clarify the relationship between EM and residual stress [4-6]. The present authors have reported the numerical analysis of vacancy transport based upon the mass balance equation [7]. This paper concludes that the behavior of vacancy transport by EM is influenced by residual stress. In this paper, an equation for vacancy transport is proposed to include the effect of residual stress. A computer-aided simulation and an in-situ observation test are conducted to discuss the quantitative relationship between current density and residual stress. [Keywords:.",

keywords = "Electromigration, In-situ observation, Numerical analysis, Residual stress",

author = "Takenao Nemoto and Toshimitsu Yokobori and Tsutomu Murakawa",

year = "2007",

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doi = "10.1109/RELPHY.2007.369987",

language = "English",

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series = "Annual Proceedings - Reliability Physics (Symposium)",

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booktitle = "2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual",

note = "45th Annual IEEE International Reliability Physics Symposium 2007, IRPS ; Conference date: 15-04-2007 Through 19-04-2007",

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T1 - Theoretical analysis of vacancy transport combined with electromigration and stress induced voiding

AU - Nemoto, Takenao

AU - Yokobori, Toshimitsu

AU - Murakawa, Tsutomu

PY - 2007/9/25

Y1 - 2007/9/25

N2 - Electromigration (EM) and stress-induced voiding have become significant in recent LSI interconnections due to the increase in current density and residual stress [1-3]. Many works have been carried out to clarify the relationship between EM and residual stress [4-6]. The present authors have reported the numerical analysis of vacancy transport based upon the mass balance equation [7]. This paper concludes that the behavior of vacancy transport by EM is influenced by residual stress. In this paper, an equation for vacancy transport is proposed to include the effect of residual stress. A computer-aided simulation and an in-situ observation test are conducted to discuss the quantitative relationship between current density and residual stress. [Keywords:.

AB - Electromigration (EM) and stress-induced voiding have become significant in recent LSI interconnections due to the increase in current density and residual stress [1-3]. Many works have been carried out to clarify the relationship between EM and residual stress [4-6]. The present authors have reported the numerical analysis of vacancy transport based upon the mass balance equation [7]. This paper concludes that the behavior of vacancy transport by EM is influenced by residual stress. In this paper, an equation for vacancy transport is proposed to include the effect of residual stress. A computer-aided simulation and an in-situ observation test are conducted to discuss the quantitative relationship between current density and residual stress. [Keywords:.

KW - Electromigration

KW - In-situ observation

KW - Numerical analysis

KW - Residual stress

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T3 - Annual Proceedings - Reliability Physics (Symposium)

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BT - 2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual

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Y2 - 15 April 2007 through 19 April 2007

ER -

Theoretical analysis of vacancy transport combined with electromigration and stress induced voiding

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Keywords

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