Theoretical analysis of the diffusive ion in biased plasma enhanced diamond chemical vapor deposition

Riichiro Saito, J. Sano, N. Ishigaki, T. Kimura, S. Yugo

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The role of the bias pretreatment for the enhanced nucleation of the diamond nuclei in the chemical vapor deposition of diamond is theoretically investigated. We obtain the kinetic energy of ions impinging on the surface of the substrate as a function of bias voltage. The experimentally obtained optimum bias voltage of -100 V for the enhanced nucleation of diamond nuclei corresponds to the C ion energy of ∼5 eV at the surface of the substrate. The reduction of the ion energy is caused by the scattering in the ion sheath region of the plasma. The ion sheath width and the ion energy on the surface of the substrate are given as functions of the gas pressure and the bias voltage. The results are compared with the experimental results.

Original languageEnglish
Pages (from-to)2559-2564
Number of pages6
JournalJournal of Applied Physics
Volume90
Issue number5
DOIs
Publication statusPublished - 2001 Sep 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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