Abstract
Wafer-level vacuum sealing and electrical interconnection are often critical for microelectromechanical systems (MEMS). This article presents a packaging and integration technology, which is applicable to non-planer (i.e. microstructured) and temperature-sensitive wafers by means of single-point diamond fly cutting of electroplated Au bumps and Au-Au diffusion bonding. The process condition was optimized by L18 Design of Experiments (DOE), and the bonding force and surface pre-treatment were extracted as dominant parameters. The crystal size of the Au bump enlarges after heat treatment for degassing at 300°C, but a smaller crystal size, which is preferred for bonding, is obtained by fly cutting, as observed by electron back scattering diffraction (EBSD). Finally, 100% yield of vacuum-sealing and a high bonding shear strength were achieved.
Original language | English |
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Title of host publication | 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1283-1286 |
Number of pages | 4 |
ISBN (Print) | 9781479989553 |
DOIs | |
Publication status | Published - 2015 Aug 5 |
Event | 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015 - Anchorage, United States Duration: 2015 Jun 21 → 2015 Jun 25 |
Other
Other | 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015 |
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Country/Territory | United States |
City | Anchorage |
Period | 15/6/21 → 15/6/25 |
Keywords
- Au-Au diffusion bonding
- Electron back scattering diffraction
- Hetero-integration
- Single-point diamond fly cutting
- Wafer-level vacuum sealing
ASJC Scopus subject areas
- Instrumentation
- Electrical and Electronic Engineering