The wafer-level vacuum sealing and electrical interconnection using electroplated gold bumps planarized by single-point diamond fly cutting

Hideki Hirano; K. Hikichi; S. Tanaka

doi:10.1109/TRANSDUCERS.2015.7181165

The wafer-level vacuum sealing and electrical interconnection using electroplated gold bumps planarized by single-point diamond fly cutting

Hideki Hirano, K. Hikichi, S. Tanaka

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

17 Citations (Scopus)

Abstract

Wafer-level vacuum sealing and electrical interconnection are often critical for microelectromechanical systems (MEMS). This article presents a packaging and integration technology, which is applicable to non-planer (i.e. microstructured) and temperature-sensitive wafers by means of single-point diamond fly cutting of electroplated Au bumps and Au-Au diffusion bonding. The process condition was optimized by L18 Design of Experiments (DOE), and the bonding force and surface pre-treatment were extracted as dominant parameters. The crystal size of the Au bump enlarges after heat treatment for degassing at 300°C, but a smaller crystal size, which is preferred for bonding, is obtained by fly cutting, as observed by electron back scattering diffraction (EBSD). Finally, 100% yield of vacuum-sealing and a high bonding shear strength were achieved.

Original language	English
Title of host publication	2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1283-1286
Number of pages	4
ISBN (Print)	9781479989553
DOIs	https://doi.org/10.1109/TRANSDUCERS.2015.7181165
Publication status	Published - 2015 Aug 5
Event	18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015 - Anchorage, United States Duration: 2015 Jun 21 → 2015 Jun 25

Other

Other	18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015
Country/Territory	United States
City	Anchorage
Period	15/6/21 → 15/6/25

Keywords

Au-Au diffusion bonding
Electron back scattering diffraction
Hetero-integration
Single-point diamond fly cutting
Wafer-level vacuum sealing

ASJC Scopus subject areas

Instrumentation
Electrical and Electronic Engineering

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10.1109/TRANSDUCERS.2015.7181165

Cite this

Hirano, H., Hikichi, K., & Tanaka, S. (2015). The wafer-level vacuum sealing and electrical interconnection using electroplated gold bumps planarized by single-point diamond fly cutting. In 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015 (pp. 1283-1286). [7181165] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TRANSDUCERS.2015.7181165

The wafer-level vacuum sealing and electrical interconnection using electroplated gold bumps planarized by single-point diamond fly cutting. / Hirano, Hideki; Hikichi, K.; Tanaka, S.

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 1283-1286 7181165.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hirano, H, Hikichi, K & Tanaka, S 2015, The wafer-level vacuum sealing and electrical interconnection using electroplated gold bumps planarized by single-point diamond fly cutting. in 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015., 7181165, Institute of Electrical and Electronics Engineers Inc., pp. 1283-1286, 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015, Anchorage, United States, 15/6/21. https://doi.org/10.1109/TRANSDUCERS.2015.7181165

Hirano H, Hikichi K, Tanaka S. The wafer-level vacuum sealing and electrical interconnection using electroplated gold bumps planarized by single-point diamond fly cutting. In 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 1283-1286. 7181165 doi: 10.1109/TRANSDUCERS.2015.7181165

Hirano, Hideki ; Hikichi, K. ; Tanaka, S. / The wafer-level vacuum sealing and electrical interconnection using electroplated gold bumps planarized by single-point diamond fly cutting. 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 1283-1286

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AB - Wafer-level vacuum sealing and electrical interconnection are often critical for microelectromechanical systems (MEMS). This article presents a packaging and integration technology, which is applicable to non-planer (i.e. microstructured) and temperature-sensitive wafers by means of single-point diamond fly cutting of electroplated Au bumps and Au-Au diffusion bonding. The process condition was optimized by L18 Design of Experiments (DOE), and the bonding force and surface pre-treatment were extracted as dominant parameters. The crystal size of the Au bump enlarges after heat treatment for degassing at 300°C, but a smaller crystal size, which is preferred for bonding, is obtained by fly cutting, as observed by electron back scattering diffraction (EBSD). Finally, 100% yield of vacuum-sealing and a high bonding shear strength were achieved.

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The wafer-level vacuum sealing and electrical interconnection using electroplated gold bumps planarized by single-point diamond fly cutting

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