The use of diethylselenide as a less-hazardous source in CuInGaSe2 photoabsorbing alloy formation by selenization of metal precursors premixed with Se

M. Sugiyama, F. B. Dejene, A. Kinoshita, M. Fukaya, Y. Maru, T. Nakagawa, H. Nakanishi, V. Alberts, S. F. Chichibu

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

Selenization growth of phase-separation-free polycrystalline CuIn1-xGaxSe2(0 ≤ x ≤ 0.29) films was demonstrated using a less-hazardous organometallic Se source, diethylselenide [(C2H5)2Se: DESe], and stacked structure of Se-premixed Cu-In-Ga metals called 'precursors'. Distinct from the case of using Se vapor or H2Se gas, single-phase CuInGaSe2 films were obtained without thermal annealing using a combination of DESe and Se-premixed precursors. Photoluminescence spectra of the films at 77 K were dominated by the defect-related donor-acceptor pair and free electron to acceptor recombination emissions, which are particular to the CuInGaSe2 films exhibiting high-conversion efficiency.

Original languageEnglish
Pages (from-to)214-217
Number of pages4
JournalJournal of Crystal Growth
Volume294
Issue number2
DOIs
Publication statusPublished - 2006 Sep 4
Externally publishedYes

Keywords

  • A1. Growth models
  • A3. Physical vapor deposition processes
  • B2. Semiconducting ternary compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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