Selenization growth of phase-separation-free polycrystalline CuIn1-xGaxSe2(0 ≤ x ≤ 0.29) films was demonstrated using a less-hazardous organometallic Se source, diethylselenide [(C2H5)2Se: DESe], and stacked structure of Se-premixed Cu-In-Ga metals called 'precursors'. Distinct from the case of using Se vapor or H2Se gas, single-phase CuInGaSe2 films were obtained without thermal annealing using a combination of DESe and Se-premixed precursors. Photoluminescence spectra of the films at 77 K were dominated by the defect-related donor-acceptor pair and free electron to acceptor recombination emissions, which are particular to the CuInGaSe2 films exhibiting high-conversion efficiency.
- A1. Growth models
- A3. Physical vapor deposition processes
- B2. Semiconducting ternary compounds
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry